Add to ORKGAbstract—An increasing integration of nanoscale sensors is being observed in BioSensing and Biomimetic systems. Power consumption is deemed a major limiter as the complexity of integration increases. Supply voltage based scaling using CMOS is also a challenge due to increasing leakage currents. This work presents alternative devices – Interband Tunnel Field Effec
This paper presents different strategies to improve the energy efficiency of nanoscaled Si based dev...
The desire to reduce the power consumption of consumer electronics has driven the semiconductor indu...
In order to sustain the unprecedented growth of the Information Technology, it is necessary to achie...
As the dimensions of transistors shrink, the close proximity between the source and drain reduces th...
International audienceFuture Nanoelectronic devices face substantial challenges, in particular incre...
As CMOS electronics grow ever more ubiquitous and essential to modern life, managing and reducing po...
Scaling of metal-oxide-semiconductor field-effect transistors (MOSFET) is hitting fundamental limits...
As number of transistors per unit area in integrated circuits increases, power dissipation of the ch...
Traditional metal-oxide-semiconductor field effect transistor scaling has advanced successfully over...
Abstract—A new sensing metric is proposed for a field-effect transistor (FET)-based biosensor. As pr...
Traditional Gate engineered Metal Oxide Semiconductor (MOS) technology faced serious challenges in t...
International audienceFuture ICs are facing dramatic challenges in performance as well as static and...
The tunnel field effect transistor (TFET) has the potential to operate at lower voltages and lower p...
Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic de...
Continuing scaling of transistors as density approaches the terascale regime (1012 devices/cm2) requ...
This paper presents different strategies to improve the energy efficiency of nanoscaled Si based dev...
The desire to reduce the power consumption of consumer electronics has driven the semiconductor indu...
In order to sustain the unprecedented growth of the Information Technology, it is necessary to achie...
As the dimensions of transistors shrink, the close proximity between the source and drain reduces th...
International audienceFuture Nanoelectronic devices face substantial challenges, in particular incre...
As CMOS electronics grow ever more ubiquitous and essential to modern life, managing and reducing po...
Scaling of metal-oxide-semiconductor field-effect transistors (MOSFET) is hitting fundamental limits...
As number of transistors per unit area in integrated circuits increases, power dissipation of the ch...
Traditional metal-oxide-semiconductor field effect transistor scaling has advanced successfully over...
Abstract—A new sensing metric is proposed for a field-effect transistor (FET)-based biosensor. As pr...
Traditional Gate engineered Metal Oxide Semiconductor (MOS) technology faced serious challenges in t...
International audienceFuture ICs are facing dramatic challenges in performance as well as static and...
The tunnel field effect transistor (TFET) has the potential to operate at lower voltages and lower p...
Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic de...
Continuing scaling of transistors as density approaches the terascale regime (1012 devices/cm2) requ...
This paper presents different strategies to improve the energy efficiency of nanoscaled Si based dev...
The desire to reduce the power consumption of consumer electronics has driven the semiconductor indu...
In order to sustain the unprecedented growth of the Information Technology, it is necessary to achie...