Abstract—Random telegraph noise (RTN) has become an important reliability issue at the sub-65nm technology node. Existing RTN simulation approaches mainly focus on single trap induced RTN and transient response of RTN, which are usually time-consuming for circuit-level simulation. This paper proposes a statistical algorithm to study multiple traps induced RTN in digital circuits, to show the temporal distribution of circuit delay under RTN. Based on the simulation results we show how to protect circuit from RTN. Bias dependence of RTN is also discussed. Keywords—Random telegraph noise; Statistical analysis; Relia-bilit
The complexity of Random Telegraph Noise (RTN) under digital circuit operations makes it difficult t...
Abstract—With aggressive technology scaling and heightened variability, circuits such as SRAMs and D...
In this paper, the amplitude (Delta I-d/I-d) distribution of random telegraph noise (RTN) induced by...
Random telegraph noise (RTN) is one of the important dynamic variation sources in ultrascaled MOSFET...
Random telegraph noise (RTN) adversely impacts circuit performance and this impact increases for sma...
In this paper, we propose new guidelines for the analysis of random telegraph noise (RTN) in electro...
In this paper, we discuss some of the measurement and analysis techniques for Random Telegraph Noise...
Random telegraph noise (RTN) adversely induces time dependent device-to-device variations and requir...
Abstract—Random telegraph noise (RTN) is one of the critical re-liability concerns in nanoscale circ...
Abstract: In this paper, we delve into one of the most relevant defects-related phenomena causing f...
Random telegraph signal (RTS) noise has shown an increased impact on circuit performance at advanced...
A new method for the analysis of multilevel Random Telegraph Noise (RTN) signals has been recently p...
Random Telegraph Noise (RTN) effects are investigated in 65nm SRAM cells by using a new characteriza...
In this work, we report a detailed discussion on the techniques and the requirements needed to enabl...
The complexity of Random Telegraph Noise (RTN) under digital circuit operations makes it difficult t...
The complexity of Random Telegraph Noise (RTN) under digital circuit operations makes it difficult t...
Abstract—With aggressive technology scaling and heightened variability, circuits such as SRAMs and D...
In this paper, the amplitude (Delta I-d/I-d) distribution of random telegraph noise (RTN) induced by...
Random telegraph noise (RTN) is one of the important dynamic variation sources in ultrascaled MOSFET...
Random telegraph noise (RTN) adversely impacts circuit performance and this impact increases for sma...
In this paper, we propose new guidelines for the analysis of random telegraph noise (RTN) in electro...
In this paper, we discuss some of the measurement and analysis techniques for Random Telegraph Noise...
Random telegraph noise (RTN) adversely induces time dependent device-to-device variations and requir...
Abstract—Random telegraph noise (RTN) is one of the critical re-liability concerns in nanoscale circ...
Abstract: In this paper, we delve into one of the most relevant defects-related phenomena causing f...
Random telegraph signal (RTS) noise has shown an increased impact on circuit performance at advanced...
A new method for the analysis of multilevel Random Telegraph Noise (RTN) signals has been recently p...
Random Telegraph Noise (RTN) effects are investigated in 65nm SRAM cells by using a new characteriza...
In this work, we report a detailed discussion on the techniques and the requirements needed to enabl...
The complexity of Random Telegraph Noise (RTN) under digital circuit operations makes it difficult t...
The complexity of Random Telegraph Noise (RTN) under digital circuit operations makes it difficult t...
Abstract—With aggressive technology scaling and heightened variability, circuits such as SRAMs and D...
In this paper, the amplitude (Delta I-d/I-d) distribution of random telegraph noise (RTN) induced by...