We proposed a model to study the resistance degradation behavior of ferroelectric oxides in the presence of ferroelectric spontaneous polarization by combining the phase-field model of ferroelectric domains and nonlinear diffusion equations for ionic/electronic transport. We took into account the nonperiod-ic boundary conditions for solving the electrochemical transport equations and Ginzburg–Landau equations using the Chebyshev collocation algorithm. We considered a single domain structure relative to a thin film BaTiO3 single crystal orientated to the normal of the electrode plates (Ni) in a single parallel plate capacitor configuration. The capacitor was subjected to a dc bias of 0.5 V either along the polarization direction or opposite ...
Ferroelectric polar displacements have recently been observed in conducting electron-doped BaTiO3 (n...
The relationship between retention loss in single crystal PbTiO3 ferroelectric thin films and leakag...
Electrode interface is a key element in controlling the macroscopic electrical properties of the fer...
We report a first-principles investigation of ultrathin BaTiO3 films with SrRuO3 electrodes. We find...
A continuum phase field model is used to investigate the poling behavior of BaTiO3 (BTO) thin films ...
A continuum phase field model is used to investigate the poling behavior of BaTiO3 (BTO) thin films ...
A continuum phase field model is used to investigate the poling behavior of BaTiO3 (BTO) thin films ...
A continuum phase field model is used to investigate the poling behavior of BaTiO3 (BTO) thin films ...
A continuum phase field model is used to investigate the poling behavior of BaTiO3 (BTO) thin films wi...
A continuum phase field model is used to investigate the poling behavior of BaTiO3 (BTO) thin films wi...
Ferroelectric materials are characterized by a reversible spontaneous electric polarization in the a...
The instability of ferroelectric ordering in ultra-thin films is one of the most important fundament...
Ferroelectric materials are characterized by a reversible spontaneous electric polarization in the a...
Advanced use of ferroelectric capacitors in data storage and computing relies on the control of thei...
The ferroelectric domain surface charge dynamics after a cubic-to-tetragonal phase transition on the...
Ferroelectric polar displacements have recently been observed in conducting electron-doped BaTiO3 (n...
The relationship between retention loss in single crystal PbTiO3 ferroelectric thin films and leakag...
Electrode interface is a key element in controlling the macroscopic electrical properties of the fer...
We report a first-principles investigation of ultrathin BaTiO3 films with SrRuO3 electrodes. We find...
A continuum phase field model is used to investigate the poling behavior of BaTiO3 (BTO) thin films ...
A continuum phase field model is used to investigate the poling behavior of BaTiO3 (BTO) thin films ...
A continuum phase field model is used to investigate the poling behavior of BaTiO3 (BTO) thin films ...
A continuum phase field model is used to investigate the poling behavior of BaTiO3 (BTO) thin films ...
A continuum phase field model is used to investigate the poling behavior of BaTiO3 (BTO) thin films wi...
A continuum phase field model is used to investigate the poling behavior of BaTiO3 (BTO) thin films wi...
Ferroelectric materials are characterized by a reversible spontaneous electric polarization in the a...
The instability of ferroelectric ordering in ultra-thin films is one of the most important fundament...
Ferroelectric materials are characterized by a reversible spontaneous electric polarization in the a...
Advanced use of ferroelectric capacitors in data storage and computing relies on the control of thei...
The ferroelectric domain surface charge dynamics after a cubic-to-tetragonal phase transition on the...
Ferroelectric polar displacements have recently been observed in conducting electron-doped BaTiO3 (n...
The relationship between retention loss in single crystal PbTiO3 ferroelectric thin films and leakag...
Electrode interface is a key element in controlling the macroscopic electrical properties of the fer...