We present a short review of alloying in uncapped self-organized semiconductor heteronanos-tructures. Our aim is to provide a logical guide through the main concepts proposed in recent scientific debates. In particular, we focus on the issue of mapping the chemical composition within individual germanium quantum dots grown on silicon surfaces, a widely studied model system with high technological potential. We discuss the different experimental results reported so far in the literature, along with the main theories suggested for their rationalization. In particular, we expand on the interplay of competing factors, including thermodynamic considerations, strain relaxation and kinetic limitations. Finally, we propose a possible pathway toward...
In this paper we present a study on the Ge composition and shape evolution of self-assembled Ge/Si(0...
International audienceMany recent advances in microelectronics would not have been possible without ...
The generally accepted notions about the formation mechanisms for germanium islands with nanometer-s...
We present a short review of alloying in uncapped self-organized semiconductor heteronanos-tructures...
Scanning probe microscopy combined with selective wet chemical etching is employed to quantitatively...
Strained epitaxial growth of Ge on Si(001) produces self-assembled, nanometer scale islands, or quan...
This article presents the results of three-dimensional modeling of heteroepitaxial thin film growth ...
We have investigated the nucleation thermodynamics and kinetics of the Ge quantum dot (QD) self-ass...
We have followed by AFM and STM the epitaxial growth of InAs on GaAs(001) and Ge on Si(111) starting...
The current status of the research in the ®eld of synthesis and application of silicon and germanium...
We discuss the self-aggregation process of InAs and Si-Ge quantum dots (QDs) on natural and patterne...
Epitaxial growth of germanium quantum dots on an oxidized silicon surface is considered. A kinetic m...
© 2020 Elsevier B.V. Numerous theoretical and experimental studies show that during epitaxial growth...
In this paper we present a study on the Ge composition and shape evolution of self-assembled Ge/Si(0...
International audienceMany recent advances in microelectronics would not have been possible without ...
The generally accepted notions about the formation mechanisms for germanium islands with nanometer-s...
We present a short review of alloying in uncapped self-organized semiconductor heteronanos-tructures...
Scanning probe microscopy combined with selective wet chemical etching is employed to quantitatively...
Strained epitaxial growth of Ge on Si(001) produces self-assembled, nanometer scale islands, or quan...
This article presents the results of three-dimensional modeling of heteroepitaxial thin film growth ...
We have investigated the nucleation thermodynamics and kinetics of the Ge quantum dot (QD) self-ass...
We have followed by AFM and STM the epitaxial growth of InAs on GaAs(001) and Ge on Si(111) starting...
The current status of the research in the ®eld of synthesis and application of silicon and germanium...
We discuss the self-aggregation process of InAs and Si-Ge quantum dots (QDs) on natural and patterne...
Epitaxial growth of germanium quantum dots on an oxidized silicon surface is considered. A kinetic m...
© 2020 Elsevier B.V. Numerous theoretical and experimental studies show that during epitaxial growth...
In this paper we present a study on the Ge composition and shape evolution of self-assembled Ge/Si(0...
International audienceMany recent advances in microelectronics would not have been possible without ...
The generally accepted notions about the formation mechanisms for germanium islands with nanometer-s...