MINIMOS – A Program Package to Facilitate MOS Device Design and Analysis

We describe a program package for the two-dimensional nu-merical exact simulation of planar MOS structures. The model is based upon the fundamental semiconductor equa-tions (Poisson's equation, continuity equations and cur-rent relations for electrons and holes) • To ensure maxi-mum flexibility and low computing costs sophisticated progranuning methods have been used. Dynamic memory mana-gement feasibility has been included to adjust automati-cally the memory requirements to the number of grid points. Large parts of the solution routines are assembly coded and allow a very fast execution. The input proces-sor syntax is easy to read and is shown to be fully com-patible with a recently published proposal for a unified input syntax for CAD programs. For one operating point typical execution times have been found to be between 15 and 60 seconds on a CDC Cyber 74 computer depending on bias values. The calculation of the current-voltage characteristics of a planar MOS transi-stor (10 operation points) in the subthreshold region can be performed in about 120 seconds CPU time. The program has been successfully tested for widely vary-ing devices, geometries and bias conditions. Reasonable agreement between theory and experiment has been obtained in almost all cases. 1