Evaluation of Self-Heating and Hot Carrier Degradation of Poly-Si Thin-Film Transistors using Charge Pumping technique

Abstract—Self-heating (SH) and hot carrier (HC) degradation of n-type poly-Si thin-film transistors (TFTs) is evaluated by using charge pumping (CP) technique. By extracting trap state energy distribution, it is demonstrated that SH degradation is mainly attributed to the generation of deep states. For HC stressed TFTs, an anomalous ICP decrease with the stress time is observed in a low Vg stress condition controlled by hole trapping; while in a mid Vg condition, CP signal clearly indicates the trap states generation controlled by electron trapping