Abstract—This study explores the relative intensity noise char-acteristics of quantum-dot vertical-cavity surface-emitting lasers (QD VCSELs). The resonance frequency and eye diagram are pre-sented. The linewidth enhancement factor (α factor) of QD VC-SEL is also investigated experimentally. The values of α factor were measured to be between 0.48 and 0.60. Moreover, a photonic RF phase shifter is examined using the QD VCSEL. A phase shifter with a total phase shift of 2π was demonstrated. These investiga-tions and demonstrations will be useful in the field of QD VCSEL. Index Terms—Linewidth enhancement factor, quantum dot (QD), relative intensity noise (RIN), vertical-cavity surface-emitting laser (VCSEL). I
The spectral dependence of the linewidth enhancement factor above threshold is experimentally observ...
[[abstract]]© 2007 Institute of Electrical and Electronics Engineers-We develop a model for the slow...
In this thesis, spectral effects of QD lasers including injection locking of QD lasers and their lin...
Abstract—This investigation explores experimentally the optical characteristics of long-wavelength q...
Advanced types of QD media allow an ultrahigh modal gain, avoid temperature depletion and gain satur...
International audienceThis work experimentally investigates the relative intensity noise (RIN) of se...
We present the fabrication of 1.3 µm waveband p-doped InAs quantum dot (QD) vertical cavity surface ...
textDue to quantum dots’ atom-like density of states, quantum dot lasers have been expected to exhi...
Edge-emitting semiconductor lasers with self-assembled InAs quantum dot (QD) active regions have dem...
Abstract—We present a complete experimental evaluation of the effective parameters necessary to desc...
This paper reports self-sustained pulsation and electrical-to-optical signal peaking in vertical-cav...
[[abstract]]We develop a simple model for the slow lights in vertical cavity surface emission lasers...
We present the fabrication of 1.3 mu m waveband p-doped InAs quantum dot (QD) vertical cavity surfac...
The transistor laser (TL) is a novel three-port optoelectronic device that exhibits intrinsic advant...
International audienceWe present the first demonstration of a vertical cavity surface emitting laser...
The spectral dependence of the linewidth enhancement factor above threshold is experimentally observ...
[[abstract]]© 2007 Institute of Electrical and Electronics Engineers-We develop a model for the slow...
In this thesis, spectral effects of QD lasers including injection locking of QD lasers and their lin...
Abstract—This investigation explores experimentally the optical characteristics of long-wavelength q...
Advanced types of QD media allow an ultrahigh modal gain, avoid temperature depletion and gain satur...
International audienceThis work experimentally investigates the relative intensity noise (RIN) of se...
We present the fabrication of 1.3 µm waveband p-doped InAs quantum dot (QD) vertical cavity surface ...
textDue to quantum dots’ atom-like density of states, quantum dot lasers have been expected to exhi...
Edge-emitting semiconductor lasers with self-assembled InAs quantum dot (QD) active regions have dem...
Abstract—We present a complete experimental evaluation of the effective parameters necessary to desc...
This paper reports self-sustained pulsation and electrical-to-optical signal peaking in vertical-cav...
[[abstract]]We develop a simple model for the slow lights in vertical cavity surface emission lasers...
We present the fabrication of 1.3 mu m waveband p-doped InAs quantum dot (QD) vertical cavity surfac...
The transistor laser (TL) is a novel three-port optoelectronic device that exhibits intrinsic advant...
International audienceWe present the first demonstration of a vertical cavity surface emitting laser...
The spectral dependence of the linewidth enhancement factor above threshold is experimentally observ...
[[abstract]]© 2007 Institute of Electrical and Electronics Engineers-We develop a model for the slow...
In this thesis, spectral effects of QD lasers including injection locking of QD lasers and their lin...