INV ITED

The use of interband tunneling to obtain steep subthreshold transistors at less than 0.5 V is described in this paper; underlying theory, key parameters, and optimization of performance are discussed. By Alan C. Seabaugh, Fellow IEEE, and Qin Zhang, Member IEEE ABSTRACT | Steep subthreshold swing transistors based on interband tunneling are examined toward extending the per-formance of electronics systems. In particular, this review introduces and summarizes progress in the development of the tunnel field-effect transistors (TFETs) including its origin, cur-rent experimental and theoretical performance relative to the metal–oxide–semiconductor field-effect transistor (MOSFET), basic current-transport theory, design tradeoffs, and funda-mental challenges. The promise of the TFET is in its ability to provide higher drive current than the MOSFET as supply volt-ages approach 0.1 V