Carbon Nanotube Electronics and Optoelectronics

We discuss recent developments in our research on single carbon nanotube field-effect transistors and light emitting and detecting devices. Specifically, we show that by using either double gate devices, or selective charge-transfer doping, we can convert Schottky barrier CNTFETs into bulk-switched devices, ambipolar CNTFETs into unipolar devices, while at the same time enhance both the ON and OFF state device can be used as light emitters via e-h recombination, characteristics. Under ambipolar conditions CNTFETs.2-1 0 1 2 vos (VI while light irraiiation of CNTFETs leads to photoconductivity Thus, the CNTFET can be used as a detector