Abstract We designed and fabricated Ge/Si avalanche photodiodes grown on silicon substrates. The mesa-type photodiodes exhibit a responsivity at 1310nm of 0.54A/W, a breakdown voltage thermal coefficient of 0.05%/°C, a 3dB-bandwidth of 10GHz. The gain-bandwidth product was measured as 153GHz. The effective k value extracted from the excess noise factor was 0.1
Increasing reliance on the Internet places greater and greater demands for high-speed optical commun...
Increasing reliance on the Internet places greater and greater demands for high -speed optical commu...
The avalanche photodiode (APD) is widely used in optical fibre communications (Campbell, 2007) due t...
Abstract: We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes both with high per...
Abstract: We demonstrate low-voltage waveguide-coupled germanium avalanche photodetectors (APDs) wit...
Significant progress has been made recently in demonstrating that silicon photonics is a promising t...
Research on Silicon based avalanche photodiodes has been seemingly increasing in the last decades, t...
Avalanche Photodiodes (APDs) are widely used in fiber-optic communications as well as imaging and se...
Afused InGaAs–Si avalanche photodiode (APD) with a low excess noise factor of 2.3 at a gain of 20 is...
金沢大学理工研究域電子情報学系A Si APD was fabricated by standard 0.18 μm CMOS process. The maximum avalanche gain ...
We present the DC, small signal and large signal performance of low excess-noise waveguide coupled g...
AbsWuct-Avalanche gain in Ge,Si,-JSi heterostructures photodiodes has been measured for the first ti...
Abstract We demonstrate low-voltage Ge waveguide avalanche photodetectors (APDs) with gain-bandwidth...
A hybrid BiCMOS-Silicon Photonics receiver with a waveguide-coupled Ge/Si avalanche photodiode is de...
We demonstrate low-voltage germanium waveguide avalanche photodetectors (APD) with gain-bandwidth pr...
Increasing reliance on the Internet places greater and greater demands for high-speed optical commun...
Increasing reliance on the Internet places greater and greater demands for high -speed optical commu...
The avalanche photodiode (APD) is widely used in optical fibre communications (Campbell, 2007) due t...
Abstract: We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes both with high per...
Abstract: We demonstrate low-voltage waveguide-coupled germanium avalanche photodetectors (APDs) wit...
Significant progress has been made recently in demonstrating that silicon photonics is a promising t...
Research on Silicon based avalanche photodiodes has been seemingly increasing in the last decades, t...
Avalanche Photodiodes (APDs) are widely used in fiber-optic communications as well as imaging and se...
Afused InGaAs–Si avalanche photodiode (APD) with a low excess noise factor of 2.3 at a gain of 20 is...
金沢大学理工研究域電子情報学系A Si APD was fabricated by standard 0.18 μm CMOS process. The maximum avalanche gain ...
We present the DC, small signal and large signal performance of low excess-noise waveguide coupled g...
AbsWuct-Avalanche gain in Ge,Si,-JSi heterostructures photodiodes has been measured for the first ti...
Abstract We demonstrate low-voltage Ge waveguide avalanche photodetectors (APDs) with gain-bandwidth...
A hybrid BiCMOS-Silicon Photonics receiver with a waveguide-coupled Ge/Si avalanche photodiode is de...
We demonstrate low-voltage germanium waveguide avalanche photodetectors (APD) with gain-bandwidth pr...
Increasing reliance on the Internet places greater and greater demands for high-speed optical commun...
Increasing reliance on the Internet places greater and greater demands for high -speed optical commu...
The avalanche photodiode (APD) is widely used in optical fibre communications (Campbell, 2007) due t...