In this paper we focus on common data reorganization op-erations such as shuffle, pack/unpack, swap, transpose, and layout transformations. Although these operations simply relocate the data in the memory, they are costly on conven-tional systems mainly due to inefficient access patterns, limited data reuse and roundtrip data traversal throughout the mem-ory hierarchy. This paper presents a two pronged approach for efficient data reorganization, which combines (i) a pro-posed DRAM-aware reshape accelerator integrated within 3D-stacked DRAM, and (ii) a mathematical framework that is used to represent and optimize the reorganization operations. We evaluate our proposed system through two major use cases. First, we demonstrate the reshape acce...
DRAM memory systems require periodic recharging to avoid loss of data from leaky capacitors. These r...
As DRAM scaling becomes more challenging and its energy ef-ficiency receives a growing concern for d...
none43D integration based on TSV (through silicon via) technology enables stacking of multiple memor...
The memory system is a major bottleneck in achieving high performance and energy efficiency for vari...
Abstract—Memory layout transformations via data reorgani-zation are very common operations, which oc...
<p>Memory layout transformations via data reorganization are very common operations, which occur as ...
Recently, 3D-stacked dynamic random access memory (DRAM) has become a promising solution for ultra-h...
The performance gap between processors and memory has grown larger and larger in the last years. Wit...
Abstract—Recent technology advancements allow for the integration of large memory structures on-die ...
Abstract—Specialized hardware acceleration is an effective technique to mitigate the dark silicon pr...
Abstract. The memory wall (the gap between processing and storage speeds) remains a concern to compu...
As device technologies scale in the nanometer era, the current off-chip DRAM technologies are very c...
In this paper, based on the temporal and spatial locality characteristics of memory accesses in mult...
Stacked DRAM memories have become a reality in High-Performance Computing (HPC) architectures. These...
Advancements in packaging technology enable high-bandwidth 3D-DRAM that mitigates the memory bandwid...
DRAM memory systems require periodic recharging to avoid loss of data from leaky capacitors. These r...
As DRAM scaling becomes more challenging and its energy ef-ficiency receives a growing concern for d...
none43D integration based on TSV (through silicon via) technology enables stacking of multiple memor...
The memory system is a major bottleneck in achieving high performance and energy efficiency for vari...
Abstract—Memory layout transformations via data reorgani-zation are very common operations, which oc...
<p>Memory layout transformations via data reorganization are very common operations, which occur as ...
Recently, 3D-stacked dynamic random access memory (DRAM) has become a promising solution for ultra-h...
The performance gap between processors and memory has grown larger and larger in the last years. Wit...
Abstract—Recent technology advancements allow for the integration of large memory structures on-die ...
Abstract—Specialized hardware acceleration is an effective technique to mitigate the dark silicon pr...
Abstract. The memory wall (the gap between processing and storage speeds) remains a concern to compu...
As device technologies scale in the nanometer era, the current off-chip DRAM technologies are very c...
In this paper, based on the temporal and spatial locality characteristics of memory accesses in mult...
Stacked DRAM memories have become a reality in High-Performance Computing (HPC) architectures. These...
Advancements in packaging technology enable high-bandwidth 3D-DRAM that mitigates the memory bandwid...
DRAM memory systems require periodic recharging to avoid loss of data from leaky capacitors. These r...
As DRAM scaling becomes more challenging and its energy ef-ficiency receives a growing concern for d...
none43D integration based on TSV (through silicon via) technology enables stacking of multiple memor...