Abstract — As process variations grow with technology scaling, failure rates increase and are predicted to be so high as to render devices unusable for computing domain. In order to continue to benefit from scaling, three dimensions can be explored: increasing operational margins, testing, and the resilience of applications. The solutions in each dimension bring out different trade-offs in yield, failure rate, test cost, and performance. We use a ternary content-addressable memory (TCAM) as a case study to better understand these trade-offs. We develop two new delay tests for TCAMs, and a new method to estimate yield, failure rate, test cost, and performance of TCAM under process variations when various tests are used. Our results show that...
In this thesis, we have investigated the impact of parametric variations on the behaviour of one per...
STT-MRAM has long been a promising non-volatile memory solution for the embedded application space o...
Manufacturing-time process (P) variations and runtime voltage (V) and temperature (T) variations can...
Abstract—Process variations are growing with technology scaling towards nano-scale. This brings new ...
Ternary content addressable memory (TCAM) is more susceptible to soft errors than static random acce...
Abstract — Ternary content addressable memory (TCAM) is one key component in the dedicated hardware ...
Abstract—With increasing inter-die and intra-die parameter variations in sub-100-nm process technolo...
Resistive random access memory (RRAM) is vying to be one of the main universal memories for computin...
The higher levels of integration and process scaling imposes failure behaviors which are challenging...
International audienceResistive Memory (RRAM)-based Ternary Content Addressable Memories (TCAMs) wer...
Resistive random access memories (RRAMs) feature high-speed operations, low-power consumption, and n...
A product may fail when design parameters are subject to large deviations. To guarantee yield one li...
Aggressive technology scaling is leading to large variations in transistor parameters due to process...
With the continued down-scaling of IC technology and increase in manufacturing process variations, i...
As DRAM cells continue to shrink, they become more susceptible to retention failures. DRAM cells tha...
In this thesis, we have investigated the impact of parametric variations on the behaviour of one per...
STT-MRAM has long been a promising non-volatile memory solution for the embedded application space o...
Manufacturing-time process (P) variations and runtime voltage (V) and temperature (T) variations can...
Abstract—Process variations are growing with technology scaling towards nano-scale. This brings new ...
Ternary content addressable memory (TCAM) is more susceptible to soft errors than static random acce...
Abstract — Ternary content addressable memory (TCAM) is one key component in the dedicated hardware ...
Abstract—With increasing inter-die and intra-die parameter variations in sub-100-nm process technolo...
Resistive random access memory (RRAM) is vying to be one of the main universal memories for computin...
The higher levels of integration and process scaling imposes failure behaviors which are challenging...
International audienceResistive Memory (RRAM)-based Ternary Content Addressable Memories (TCAMs) wer...
Resistive random access memories (RRAMs) feature high-speed operations, low-power consumption, and n...
A product may fail when design parameters are subject to large deviations. To guarantee yield one li...
Aggressive technology scaling is leading to large variations in transistor parameters due to process...
With the continued down-scaling of IC technology and increase in manufacturing process variations, i...
As DRAM cells continue to shrink, they become more susceptible to retention failures. DRAM cells tha...
In this thesis, we have investigated the impact of parametric variations on the behaviour of one per...
STT-MRAM has long been a promising non-volatile memory solution for the embedded application space o...
Manufacturing-time process (P) variations and runtime voltage (V) and temperature (T) variations can...