Abstract—Process variations are growing with technology scaling towards nano-scale. This brings new challenges to the design of memory modules, which are often the first circuits to be fabricated using a new technology and usually designed with critical timing. We observed that several delay faults, which are dependent on address transitions, may escape traditional march tests. This paper presents a new march test WT that targets such delay faults. Through Monte Carlo simulations and analytical studies on SRAM designs using an industrial 65nm process, we have demonstrated that WT provides a faulty-chip-coverage that is close to 100%. Most importantly, this is the first march test with test length that targets address-dependent delay faults ...
Abstract — As process variations grow with technology scaling, failure rates increase and are predic...
In deep sub-micron, the decrease in feature size of the transistor has led to increasing challenge i...
ories is increasingly important b e cause of the high density of current memory chips (now 16 megabi...
Abstract—With increasing inter-die and intra-die parameter variations in sub-100-nm process technolo...
To meet the market demand, next generation of technology appears with increasing speed and performan...
Resistive random access memory (RRAM) is vying to be one of the main universal memories for computin...
As manufacturing technology scales down to 65nm and below, fabricated chips are becoming increasingl...
[[abstract]]© 2004 Institute of Electrical and Electronics Engineers -With the advent of deep-submic...
The scaling of fabrication technology not only provides us higher integration and enhanced performan...
As technology scales down, digital VLSI circuits are prone to many manufacturing defects. These defe...
Abstract- High-density components and process scaling lead more and more to the occurrence of new cl...
Recent research has shown that tests generated without taking process variation into account may lea...
With the continued down-scaling of IC technology and increase in manufacturing process variations, i...
Delay test in nano-scale VLSI circuits becomes more difficult with shrinking technology feature size...
<p>Timing-related defects are becoming increasingly important in nanometer-technology integrated cir...
Abstract — As process variations grow with technology scaling, failure rates increase and are predic...
In deep sub-micron, the decrease in feature size of the transistor has led to increasing challenge i...
ories is increasingly important b e cause of the high density of current memory chips (now 16 megabi...
Abstract—With increasing inter-die and intra-die parameter variations in sub-100-nm process technolo...
To meet the market demand, next generation of technology appears with increasing speed and performan...
Resistive random access memory (RRAM) is vying to be one of the main universal memories for computin...
As manufacturing technology scales down to 65nm and below, fabricated chips are becoming increasingl...
[[abstract]]© 2004 Institute of Electrical and Electronics Engineers -With the advent of deep-submic...
The scaling of fabrication technology not only provides us higher integration and enhanced performan...
As technology scales down, digital VLSI circuits are prone to many manufacturing defects. These defe...
Abstract- High-density components and process scaling lead more and more to the occurrence of new cl...
Recent research has shown that tests generated without taking process variation into account may lea...
With the continued down-scaling of IC technology and increase in manufacturing process variations, i...
Delay test in nano-scale VLSI circuits becomes more difficult with shrinking technology feature size...
<p>Timing-related defects are becoming increasingly important in nanometer-technology integrated cir...
Abstract — As process variations grow with technology scaling, failure rates increase and are predic...
In deep sub-micron, the decrease in feature size of the transistor has led to increasing challenge i...
ories is increasingly important b e cause of the high density of current memory chips (now 16 megabi...