Add to ORKGThe topic of modern MOS-Transistor modeling is reviewed. Models for surface scattering and impact ionization, physical parameters which are of particular relevance for MOS-Transistor simulation programs, are explained. Guidelines to a mathematical analysis of the fundamental equations, which allow the judgement of numerical methods for their applicability, are presented. Examples of applications of simulation programs on the analysis of problems which are important at present are sketched
Work is focused on computer modeling of PN junction and MOSFET transistor in the program COMSOL Mult...
The contribution is mainly related to advanced problems in Monte Carlo simulations. The first sectio...
The Gummel-Poon charge controlled bipolar junction transistor model and the diode model are applied ...
ABSTRACT- Methods and problems in the field of modern MOS-modeling are reviewed. Models for surface ...
been an incentive to concentrate-persistently on device modeling. The fundamental properties which r...
been an incentive to concentrate persistently on device modeling. The fundamental properties which r...
A compact and accurate model for the substrate resistance is essential and critical for the characte...
A compact and accurate model for the substrate resistance is essential and critical for the characte...
The modeling of semiconductor device characteristics using unified table and analytical models for a...
The classic semiconductor device models are reviewed and discussed. They include the generic models ...
Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensi...
Due to their specific structures the power devices need special models different from those develope...
incentive to concentrate persistently on device modeling. The fundamental properties which represent...
integrated circuits Abstract: A new compact model for MOS transistors has been developed, MOS Model ...
An open-source and free computational tool for Design-Oriented Modeling and Simulation of MOS transi...
Work is focused on computer modeling of PN junction and MOSFET transistor in the program COMSOL Mult...
The contribution is mainly related to advanced problems in Monte Carlo simulations. The first sectio...
The Gummel-Poon charge controlled bipolar junction transistor model and the diode model are applied ...
ABSTRACT- Methods and problems in the field of modern MOS-modeling are reviewed. Models for surface ...
been an incentive to concentrate-persistently on device modeling. The fundamental properties which r...
been an incentive to concentrate persistently on device modeling. The fundamental properties which r...
A compact and accurate model for the substrate resistance is essential and critical for the characte...
A compact and accurate model for the substrate resistance is essential and critical for the characte...
The modeling of semiconductor device characteristics using unified table and analytical models for a...
The classic semiconductor device models are reviewed and discussed. They include the generic models ...
Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensi...
Due to their specific structures the power devices need special models different from those develope...
incentive to concentrate persistently on device modeling. The fundamental properties which represent...
integrated circuits Abstract: A new compact model for MOS transistors has been developed, MOS Model ...
An open-source and free computational tool for Design-Oriented Modeling and Simulation of MOS transi...
Work is focused on computer modeling of PN junction and MOSFET transistor in the program COMSOL Mult...
The contribution is mainly related to advanced problems in Monte Carlo simulations. The first sectio...
The Gummel-Poon charge controlled bipolar junction transistor model and the diode model are applied ...