Add to ORKGA novel bonding approach with an interface consisting of a metal and dielectric is developed, and a “pillar-array ” metal topology is proposed for minimal optical and electrical loss at the interface. This enables a fully lattice-matched two-terminal, four-junction device that consists of an inverted top two-junction (2J) cell with 1.85 eV GaInP/1.42 eV GaAs, and an upright lower 2J cell with ~1 eV GaInAsP/0.74 eV GaInAs aimed for concentrator applications. The fabrication pro-cess and simulation of the metal topology are discussed along with the results of GaAs/GaInAs 2J and (GaInP +GaAs)/ GaInAs three-junction bonded cells. Bonding-related issues are also addressed along with optical coupling across the bondin
Multijunction solar cells can be fabricated by bonding together component cells that are grown separ...
We report on the fabrication of III-V compound semiconductor multi-junction solar cells using the ro...
The highest solar cell conversion efficiencies are achieved with Four-junction devices under concent...
A novel bonding approach with an interface consisting of a metal and dielectric is developed, and a ...
Abstract — A novel approach has been developed to enable the creation of a fully lattice-matched tw...
Abstract—Metal-interconnected multijunction solar cells offer one pathway toward efficiencies in exc...
Triple-junction solar cells from III–V compound semiconductors have thus far delivered the highest s...
The highest conversion efficiencies are reached by multi-junction III-V solar cells. Wafer-bonding o...
III-V multi-junction solar cells have become standard in space and in terrestrial concentrator syste...
We realized high-quality InGaP/GaAs 2-junction top cells on Ge/Si, InGaAs/InP bottom cells, direct-b...
Among various types of solar cells, MOVPE-grown triple-junction III-V compound semiconductors are to...
Stacking III-V p-n junctions on top of wafer-based silicon solar cells is a promising way to go beyo...
Among various types of solar cells, MOVPE grown triple junction III V compound semiconductors are to...
Multijunction solar cells with four junctions are expected to be the next-generation technology for ...
Boeing-Spectrolab recently demonstrated monolithic 5-junction space solar cells using direct semicon...
Multijunction solar cells can be fabricated by bonding together component cells that are grown separ...
We report on the fabrication of III-V compound semiconductor multi-junction solar cells using the ro...
The highest solar cell conversion efficiencies are achieved with Four-junction devices under concent...
A novel bonding approach with an interface consisting of a metal and dielectric is developed, and a ...
Abstract — A novel approach has been developed to enable the creation of a fully lattice-matched tw...
Abstract—Metal-interconnected multijunction solar cells offer one pathway toward efficiencies in exc...
Triple-junction solar cells from III–V compound semiconductors have thus far delivered the highest s...
The highest conversion efficiencies are reached by multi-junction III-V solar cells. Wafer-bonding o...
III-V multi-junction solar cells have become standard in space and in terrestrial concentrator syste...
We realized high-quality InGaP/GaAs 2-junction top cells on Ge/Si, InGaAs/InP bottom cells, direct-b...
Among various types of solar cells, MOVPE-grown triple-junction III-V compound semiconductors are to...
Stacking III-V p-n junctions on top of wafer-based silicon solar cells is a promising way to go beyo...
Among various types of solar cells, MOVPE grown triple junction III V compound semiconductors are to...
Multijunction solar cells with four junctions are expected to be the next-generation technology for ...
Boeing-Spectrolab recently demonstrated monolithic 5-junction space solar cells using direct semicon...
Multijunction solar cells can be fabricated by bonding together component cells that are grown separ...
We report on the fabrication of III-V compound semiconductor multi-junction solar cells using the ro...
The highest solar cell conversion efficiencies are achieved with Four-junction devices under concent...