MINIMOS-a two-dimensional MOS transistor analyzer

Abstract-We describe a user-oriented software tool-MINIMOS-for the two-dimensional numerical simulation of planar MOS transistors. The fundamental semiconductor equations are solved with sophisticated programming techniques to allow very low computer costs. The pro-gram is able to calculate the doping profiles from the technological pa-rameters specified by the user. A new mobility model has been imple-mented which takes into account the dependence on the impurity concentration, electric field, temperature, and especially the distance to the Si-Si02 interface. The power of the program is shown by cal-culating the two-dimensional internal behavior of three MOST’S with 1-pm gate length differing in respect to the ion-implantation steps. In this way, the threshold voltage shift by a shallow implantation and the suppression of punchthrough by a deep implantation are demonstrated. By calculating the output characteristics without and with mobility re-duction, the essential influence of this effect is shown. From the sub-threshold characteristics, the suppression of short-channel effects by ion implantation becomes apparent. The MINIMOS program is available for everyone for just the handling costs. I