Abstract — We present a physics-based hot-carrier degradation (HCD) model and validate it against measurement data on SiON n-channel MOSFETs of various channel lengths, from ultra-scaled to long-channel transistors. The HCD model is capable of representing HCD in all these transistors stressed under different conditions using a unique set of model parameters. The degradation is modeled as a dissociation of Si–H bonds induced by two competing processes. It can be triggered by solitary highly energetical charge carriers or by excitation of multiple vibrational modes of the bond. In addition, we show that the influence of electron–electron scattering (EES), the dipole-field interaction, and the dispersion of the Si–H bond energy are crucial fo...
We present and validate a physics-based model to describe the underlyingmechanisms of hot-carrier ...
We have studied the characteristics of MOSFET degradation induced by hot-carriers. When the characte...
In a MOS structure, the generation of hot carrier interface states is a critical feature of the item...
Abstract—We present a novel approach to hot-carrier degra-dation (HCD) simulation, which for the fir...
We present and validate a physics-basedmodel for hot-carrier degradation. The model is based on a th...
The paradigm shift from a field- to an energy-based framework in the modeling of hot-carrier-induced...
We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a wide range...
International audienceThis paper presents a theoretical framework about interface states creation ra...
International audienceA detailed study of the hot-carrier degradation in nano-scale fully depleted u...
We have developed a detailed model for hot-carrier induced interface state generation in silicon me...
We develop and validate a physics-based modeling framework for coupled hot-carrier degradation (HCD)...
Hot Carrier induced degradation is modeled using the carrier energy distribution function including ...
Power devices can be found in diverse applications, for instance, as switches in battery systems. Su...
In this present communication, we have studied the effect of hot-carrier degradation effects on sur...
72 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2002.We have developed a detailed m...
We present and validate a physics-based model to describe the underlyingmechanisms of hot-carrier ...
We have studied the characteristics of MOSFET degradation induced by hot-carriers. When the characte...
In a MOS structure, the generation of hot carrier interface states is a critical feature of the item...
Abstract—We present a novel approach to hot-carrier degra-dation (HCD) simulation, which for the fir...
We present and validate a physics-basedmodel for hot-carrier degradation. The model is based on a th...
The paradigm shift from a field- to an energy-based framework in the modeling of hot-carrier-induced...
We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a wide range...
International audienceThis paper presents a theoretical framework about interface states creation ra...
International audienceA detailed study of the hot-carrier degradation in nano-scale fully depleted u...
We have developed a detailed model for hot-carrier induced interface state generation in silicon me...
We develop and validate a physics-based modeling framework for coupled hot-carrier degradation (HCD)...
Hot Carrier induced degradation is modeled using the carrier energy distribution function including ...
Power devices can be found in diverse applications, for instance, as switches in battery systems. Su...
In this present communication, we have studied the effect of hot-carrier degradation effects on sur...
72 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2002.We have developed a detailed m...
We present and validate a physics-based model to describe the underlyingmechanisms of hot-carrier ...
We have studied the characteristics of MOSFET degradation induced by hot-carriers. When the characte...
In a MOS structure, the generation of hot carrier interface states is a critical feature of the item...