Add to ORKGThe effects of external electric field F on band gap Eg(D, F) of silicon nanowires (SiNWs) in a diameter range of D) 0.45-1.79 nm are quantitatively calculated using density functional theory. The results show that Eg(D, F) decreases with increasing F due to the rapid drop of the conduction band maximum of SiNWs. As F increases, Eg(D, F) f 0 except at D) 0.45 nm. Further increasing of F results in breakdown of the geometry structure of SiNWs. In addition, the bond lengths and angles of SiNWs are also functions of F. These findings imply that Eg(D, F) functions of SiNWs can be modulated by manipulating D and F. 1
We present ab-initio calculations based on density functional theory (DFT) of the effects on the ele...
Recently we experimentally demonstrated that vapor–liquid–solid (VLS) grown silicon (Si) nanowires c...
Based on first-principles calculations we showed that superlattices of periodically repeated junctio...
The electronic and structural properties of [111] SiNWs with a diameter range of D = 0.66—1.89 nm un...
The electronic structure characteristics of silicon nanowires under strain and electric bias are stu...
We have applied density-functional theory (DFT) based calculations to investigate the size and strai...
In this study, we have investigated the influence of surface passivation on the electronic structure...
In this work band gap of hydrogen-passivated, free-standing silicon nanowires, oriented along [111] ...
A theoretical study was undertaken of the effects of single and multiple vacancies created at differ...
Nanowires are almost cylindrical structures, with diameter typically ranging from 1 to 100 nm, and l...
Abstract — We will report on the role of the length of silicon nanowire (SNW) in determining the ban...
Energy bandstructures of unstrained and strained [100] silicon nanowires are calculated with nearest...
The effects of surface reconstruction and progressive hydroxylation on the electronic properties of ...
One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility...
Several experimental groups have achieved effective n- and p-type doping of silicon nanowires (SiNWs...
We present ab-initio calculations based on density functional theory (DFT) of the effects on the ele...
Recently we experimentally demonstrated that vapor–liquid–solid (VLS) grown silicon (Si) nanowires c...
Based on first-principles calculations we showed that superlattices of periodically repeated junctio...
The electronic and structural properties of [111] SiNWs with a diameter range of D = 0.66—1.89 nm un...
The electronic structure characteristics of silicon nanowires under strain and electric bias are stu...
We have applied density-functional theory (DFT) based calculations to investigate the size and strai...
In this study, we have investigated the influence of surface passivation on the electronic structure...
In this work band gap of hydrogen-passivated, free-standing silicon nanowires, oriented along [111] ...
A theoretical study was undertaken of the effects of single and multiple vacancies created at differ...
Nanowires are almost cylindrical structures, with diameter typically ranging from 1 to 100 nm, and l...
Abstract — We will report on the role of the length of silicon nanowire (SNW) in determining the ban...
Energy bandstructures of unstrained and strained [100] silicon nanowires are calculated with nearest...
The effects of surface reconstruction and progressive hydroxylation on the electronic properties of ...
One of the main challenges for Silicon-Germanium nanowires (SiGe NWs) electronics is the possibility...
Several experimental groups have achieved effective n- and p-type doping of silicon nanowires (SiNWs...
We present ab-initio calculations based on density functional theory (DFT) of the effects on the ele...
Recently we experimentally demonstrated that vapor–liquid–solid (VLS) grown silicon (Si) nanowires c...
Based on first-principles calculations we showed that superlattices of periodically repeated junctio...