C 2015 American Chemical Society Modulating Electrical Properties of InAs

n past decades, due to their unique physical properties, IIIV semiconductor nanowires (NWs) have attracted exten-sive research and development interests for various technological applications such as electronics, sensors, and photonics.110 In particular, when configured into n-type field-effect transistors (FETs), InAs NWs have been demonstrated with excellent field-effect electron mobility (μFE) greater than 10 000 cm2 V1 s1 as well as highly efficient near-infrared and visible photoresponse at room temperature.1114 Generally, the device operation in enhancement mode (E-mode), yielding an OFF state at a zer