Improved carrier collection in intermixed InGaAs/GaAs quantum wells

We have used photoluminescence up conversion to study the carrier capture times into intermixed InGaAs/GaAs quantum wells. We have found that the capture into the intermixed wells is markedly faster than capture into the reference ~unintermixed! quantum wells. The reasons for the significant reduction in the capture time is related to the shape of the intermixed quantum well. Such a reduction in the capture time is beneficial both in terms of the quantum efficiency and the frequency response of intermixed optoelectronic devices. © 1998 American Institute of Physics