Optical properties of Pr implanted GaN epilayers and AlxGa1xN alloys

It has been shown recently that III–V nitrides serve as a good host for rare earth elements and have many potential applications in optical communications. Most work in rare earth implanted III-nitride materials so far has been focused on GaN, while AlGaN alloys should have advantages over GaN due to wider energy band gap. In this work, photoluminescence (PL) spectroscopy was used to investigate praseodymium (Pr) related transitions in Pr-implanted GaN and AlxGa1xN (0.15BxB0.33). The GaN epilayers and AlxGa1xN alloys were rapid thermally annealed in nitrogen ambient to facilitate recovery from implantatio