Light-Output-Power Enhancement of GaN-Based Light-Emitting Diodes on an n-GaN Layer Using

on an n-GaN layer by nanoimprint lithography are fabricated and investigated. At a driving current of 20 mA on a Transistor-Outline-can package, the light output power of LED III (d = 1.2 µm) was enhanced by a factor of 1.20. The internal-quantum-efficiency result offers promising potential to enhance the light output power of commercial light-emitting devices with a SiO2 oxide PQC structure on an n-GaN layer. Index Terms—Gallium nitride (GaN), light-emitting diodes (LEDs), photonic quasi-crystal (PQC). I