Hardware failure due to wearout is a growing concern. Cir-cuit failure prediction is an approach that is effective if it meets the following requirements: low design complex-ity, low overheads, generality (supporting various types of wearout including soft and hard breakdown) and high ac-curacy. State-of-the-art techniques, which typically detect and measure low level circuit properties like gate delay can-not deliver on all four requirements. Moving away from the paradigm of measuring circuit delays is key to satisfying the four design requirements. Our insight is to virtually age the processor and thus manifest a wearout fault early – we convert the delay degradation into a logic fault; expose the fault and then detect the fault. To virtu...
In nanometer technology, accurate circuit aging prediction of MOSFET digital circuits caused by agin...
Aggressive CMOS technology feature size down-scaling into the deca nanometer regime, while benefitin...
This paper presents an alternative means for measuring the Iddt current degradation with circuit age...
Aggressive technology scaling has accelerated the ageing of CMOS devices. Ageing refers to a slow pr...
CMOS feature size scaling has long been the source of dramatic performance gains. However, because v...
Aggressive technology shrinking has increased the sensitivity of integrated circuits in terms of dev...
Aggressive technology scaling has accelerated the ageing of CMOS devices. Ageing refers to a slow pr...
International audienceAging induced degradation mechanisms occurring in digital circuits are of a gr...
Reliability has always been an issue in silicon device engineering, but until now it has been manage...
One of the fundamental challenges to the performance gain in advanced semiconductor technologyis agi...
Commercial off-the-shelf (COTS) field-programmable gate arrays (FPGAs) with a 28-nm process have bec...
International audienceWith CMOS technology scaling, it becomes more and more difficult to guarantee ...
Aging is known to impact electronic systems affecting performance and reliability. However, it has b...
2012-11-21CMOS scaling has enabled greater degree of integration and higher performance but has the ...
University of Minnesota Ph.D. dissertation. April 2010. Major: Electrical Engineering. Advisor: Chri...
In nanometer technology, accurate circuit aging prediction of MOSFET digital circuits caused by agin...
Aggressive CMOS technology feature size down-scaling into the deca nanometer regime, while benefitin...
This paper presents an alternative means for measuring the Iddt current degradation with circuit age...
Aggressive technology scaling has accelerated the ageing of CMOS devices. Ageing refers to a slow pr...
CMOS feature size scaling has long been the source of dramatic performance gains. However, because v...
Aggressive technology shrinking has increased the sensitivity of integrated circuits in terms of dev...
Aggressive technology scaling has accelerated the ageing of CMOS devices. Ageing refers to a slow pr...
International audienceAging induced degradation mechanisms occurring in digital circuits are of a gr...
Reliability has always been an issue in silicon device engineering, but until now it has been manage...
One of the fundamental challenges to the performance gain in advanced semiconductor technologyis agi...
Commercial off-the-shelf (COTS) field-programmable gate arrays (FPGAs) with a 28-nm process have bec...
International audienceWith CMOS technology scaling, it becomes more and more difficult to guarantee ...
Aging is known to impact electronic systems affecting performance and reliability. However, it has b...
2012-11-21CMOS scaling has enabled greater degree of integration and higher performance but has the ...
University of Minnesota Ph.D. dissertation. April 2010. Major: Electrical Engineering. Advisor: Chri...
In nanometer technology, accurate circuit aging prediction of MOSFET digital circuits caused by agin...
Aggressive CMOS technology feature size down-scaling into the deca nanometer regime, while benefitin...
This paper presents an alternative means for measuring the Iddt current degradation with circuit age...