Abstract — Electrical control of magnetic tunnel junc-tions (MTJs) provides opportunities to introduce MTJs into high-performance applications requiring low power consumption. The magnetic state of an MTJ can be electrically controlled through: 1) the spin transfer torque (STT) effect; 2) the voltage controlled magnetic anisotropy (VCMA) effect; and 3) the fusion of STT and VCMA. Several compact models have been published for MTJs. All of these models consider an MTJ whose magnetic state is controlled through the STT effect. In this paper, a model of an MTJ comprising a free layer, an analysis layer, and a spin polarizing layer is described. The MTJ compact model, adaptive compact MTJ (ACM) model, includes the effects of asymmetry on the MT...
Spintronic magnetic sensors with the integration of magnetic materials and microstructures have been...
Abstract—Accurate modeling of magnetic tunnel junction (MTJ) is critical for design of memories such...
International audienceHigh endurance, high speed, scalability, low voltage, and CMOS-compatibility a...
The aim of this paper is to introduce a compact model for perpendicular spin-transfer torque (STT)-m...
The aim of this paper is to introduce a compact model for perpendicular spin-transfer torque (STT)-m...
Spin-transfer torque-based magnetoresistive random access memory (STT-MRAM) is a promising candidate...
We use three-terminal magnetic tunnel junctions (MTJs) designed for field-free switching by spin-orb...
International audienceWe study the influence of a second order magnetic anisotropy on magnetization ...
Magnetic tunnel junction (MTJ), which arises from emerging spintronics, has the potential to become ...
International audienceMagnetic Tunnel Junction (MTJ) devices are CMOS compatible with high stability...
Magnetic tunnel junction (MTJ), which arises from emerging spintronics, has the potential to become ...
International audienceWe use three-terminal magnetic tunnel junctions (MTJs) designed for field-free...
International audienceWe use three-terminal magnetic tunnel junctions (MTJs) designed for field-free...
Spintronics has become an area of interest for future computing beyond the transistor. Of particular...
Spintronic magnetic sensors with the integration of magnetic materials and microstructures have been...
Spintronic magnetic sensors with the integration of magnetic materials and microstructures have been...
Abstract—Accurate modeling of magnetic tunnel junction (MTJ) is critical for design of memories such...
International audienceHigh endurance, high speed, scalability, low voltage, and CMOS-compatibility a...
The aim of this paper is to introduce a compact model for perpendicular spin-transfer torque (STT)-m...
The aim of this paper is to introduce a compact model for perpendicular spin-transfer torque (STT)-m...
Spin-transfer torque-based magnetoresistive random access memory (STT-MRAM) is a promising candidate...
We use three-terminal magnetic tunnel junctions (MTJs) designed for field-free switching by spin-orb...
International audienceWe study the influence of a second order magnetic anisotropy on magnetization ...
Magnetic tunnel junction (MTJ), which arises from emerging spintronics, has the potential to become ...
International audienceMagnetic Tunnel Junction (MTJ) devices are CMOS compatible with high stability...
Magnetic tunnel junction (MTJ), which arises from emerging spintronics, has the potential to become ...
International audienceWe use three-terminal magnetic tunnel junctions (MTJs) designed for field-free...
International audienceWe use three-terminal magnetic tunnel junctions (MTJs) designed for field-free...
Spintronics has become an area of interest for future computing beyond the transistor. Of particular...
Spintronic magnetic sensors with the integration of magnetic materials and microstructures have been...
Spintronic magnetic sensors with the integration of magnetic materials and microstructures have been...
Abstract—Accurate modeling of magnetic tunnel junction (MTJ) is critical for design of memories such...
International audienceHigh endurance, high speed, scalability, low voltage, and CMOS-compatibility a...