High Drive-Current Electrically Induced Body Dynamic Threshold SOI MOSFET (EIB-DTMOS) with Large Body Effect and Low Threshold Voltage

Abstract—A novel electrically induced body dynamic threshold metal oxide semiconductor (EIB-DTMOS) is proposed where the body is electrically induced by substrate bias and its high per-formance is demonstrated by experiments and simulations. EIB-DTMOS achieves a large body effect and a low at the same time. The upper limit of the supply voltage of the EIB-DTMOS is higher than that of a conventional DTMOS, because the forward biased p–n junction leakage current of the EIB-DTMOS is lower. Among several DTMOSs, the accumulation mode EIB-DTMOS shows the highest drive-current at fixed off-current due to a large shift (or large back gate capacitance) and a suppressed short channel effect. Index Terms—Body effect, DTMOS, low power, low voltage, SOI MOSFET