Monolithic 1.55 mm GaInNAsSb quantum length were chosen [9, 10]. Two 2-section MLLs were fabricated and No. 9well passively modelocked lasers

The first monolithic GaInNAsSb quantum well 1.55 mm passively modelocked lasers grown on a GaAs substrate are reported. A repetition rate of up to 13.2 GHz and an optical pulse width as small as 26 ps have been realised. Introduction: The compact size, low power consumption, and direct electrical pumping of monolithic modelocked lasers (MLLs) make them promising candidates for inter-chip/intra-chip clock distribution, high-bit-rate optical time division multiplexing (OTDM), coarse wavelength-division multiplexing (CWDM), impulse response measure