Chemical-mechanical planarization (CMP) and other manufactur-ing steps in very deep-submicron VLSI have varying effects on de-vice and interconnect features, depending on the local layout den-sity. To improve manufacturability and performance predictability, area fill features are inserted into the layout to improve uniformity with respect to density criteria. However, the performance impact of area fill insertion is not considered by any fill method in the lit-erature. In this paper, we first review and develop estimates for capacitance and timing overhead of area fill insertions. We then give the first formulations of the Performance Impact Limited Fill (PJL-Fill) problem with the objective of either minimizing total de-lay impact (MDFC) ...
Graduation date: 2011With increasing transistor operating frequencies, interconnects and passive dev...
Inserting metal fill to improve inter-level dielectric thickness planarity is an essential part of t...
textThe nature of multiple objectives and incremental design process for modern VLSI design closure...
Chemical-mechanical planarization (CMP) and other manufactur-ing steps in very deep-submicron VLSI h...
In very deep-submicron VLSI, certain manufacturing steps – notably optical exposure, resist developm...
In very deep-submicron VLSI, manufacturing steps involving chemical-mechanical polishing (CMP) have ...
In very deep-submicron VLSI, certain manufacturing steps -- notably optical exposure, resist develop...
Control of variability and performance in the back end of the VLSI manufacturing line has become ext...
Control of variability in the back end of the line, and hence in interconnect performance as well, h...
To improve manufacturability and yield, a number of fill structures are used in semiconductor manufa...
Control of variability in the back end of the line, and hence in interconnect performance as well, h...
Chemical-mechanical planarization (CMP) and other manufacturing steps in very deep submicron VLSI ha...
via fills have become indispensable aspects of semiconductor manufacturing. CMP fills are used to re...
other manufacturing steps in very deep submicron VLSI have varying effects o n device and interconne...
Abstract — Metal fills, which are used to reduce metal thickness variations due to chemical-mechanic...
Graduation date: 2011With increasing transistor operating frequencies, interconnects and passive dev...
Inserting metal fill to improve inter-level dielectric thickness planarity is an essential part of t...
textThe nature of multiple objectives and incremental design process for modern VLSI design closure...
Chemical-mechanical planarization (CMP) and other manufactur-ing steps in very deep-submicron VLSI h...
In very deep-submicron VLSI, certain manufacturing steps – notably optical exposure, resist developm...
In very deep-submicron VLSI, manufacturing steps involving chemical-mechanical polishing (CMP) have ...
In very deep-submicron VLSI, certain manufacturing steps -- notably optical exposure, resist develop...
Control of variability and performance in the back end of the VLSI manufacturing line has become ext...
Control of variability in the back end of the line, and hence in interconnect performance as well, h...
To improve manufacturability and yield, a number of fill structures are used in semiconductor manufa...
Control of variability in the back end of the line, and hence in interconnect performance as well, h...
Chemical-mechanical planarization (CMP) and other manufacturing steps in very deep submicron VLSI ha...
via fills have become indispensable aspects of semiconductor manufacturing. CMP fills are used to re...
other manufacturing steps in very deep submicron VLSI have varying effects o n device and interconne...
Abstract — Metal fills, which are used to reduce metal thickness variations due to chemical-mechanic...
Graduation date: 2011With increasing transistor operating frequencies, interconnects and passive dev...
Inserting metal fill to improve inter-level dielectric thickness planarity is an essential part of t...
textThe nature of multiple objectives and incremental design process for modern VLSI design closure...