Organic nanodielectrics for low voltage carbon nanotube thin film transistors and complementary logic gates

Aligned arrays and random networks of single-walled carbon nanotubes (SWNTs) represent thin film material types that are attractive as conducting/semiconducting elements of flexible elec-tronic circuits.1 The large carrier mobilities2 and mechanical, chemical, and electrical robustness3,4 of individual SWNTs imbue these films with remarkably good properties. However, high-performance thin film transistors (TFTs) using submonolayer SWNT films (arrays or networks) as the semiconductor5 require high capacitance gate dielectrics to enable low voltage and possibly hysteresis-free operation. For complementary circuits, this dielectric must also be compatible with polymer coatings and other chem-istries enabling unipolar n- or p-channel transport in SWNT TFTs.6,7 Flexible electronic devices require the dielectric to be mechanically bendable; for systems that use plastic substrates, the ability to deposit the dielectric from solution at low temperatures is als