In double patterning lithography (DPL), overlay error between two patterning steps at the same layer translates into CD variability. Since CD uniformity budget is very tight, overlay control becomes a tough challenge for DPL. In this paper, we electrically evaluate overlay error for BEOL DPL with the goal of studying relative effects of different overlay sources and interactions of overlay control with design parameters. Experimental results show the following: (a) overlay electrical impact is not significant in case of positive-tone DPL (< 3.4 % average capacitance variation) and should be the base for determining overlay budget requirement; (b) when considering congestion, overlay electrical impact reduces in positive-tone DPL; (c) Des...
Abstract—Double/Multiple-patterning (DP/MP) lithography in a multiple litho-etch steps process is a ...
En microélectronique, l'augmentation de la densité des composants est la solution principale pour am...
Overlay errors, cut/block and line/space critical-dimension (CD) variations are the major sources of...
Abstract—In double patterning lithography (DPL), overlay errors between two patterning steps of the ...
Overlay control is becoming increasingly more important with the scaling of technology. It has becom...
In this study, structural variations and overlay errors caused by multiple patterning lithography te...
the only solution for 32-nm lithography process, we need to investigate how DPT affects the performa...
Abstract — Double patterning lithography (DPL) is in current pro-duction for memory products, and is...
Abstract—1 We propose shift-trim double patterning lithogra-phy (ST-DPL), a cost-effective double pa...
[[abstract]]Overlay is one of the key designed rules for producing VLSI devices. In order to have a ...
Design Rules (DRs) are the biggest design-relevant quality metric for a technology. Even small chang...
In microelectronics, the increase of component density is the main solution to improve circuit perfo...
In microelectronics, the increase of component density is the main solution to improve circuit perfo...
textAs nanometer Very Large Scale Integration (VLSI) demands more transistor density to fabricate mu...
textAs nanometer Very Large Scale Integration (VLSI) demands more transistor density to fabricate mu...
Abstract—Double/Multiple-patterning (DP/MP) lithography in a multiple litho-etch steps process is a ...
En microélectronique, l'augmentation de la densité des composants est la solution principale pour am...
Overlay errors, cut/block and line/space critical-dimension (CD) variations are the major sources of...
Abstract—In double patterning lithography (DPL), overlay errors between two patterning steps of the ...
Overlay control is becoming increasingly more important with the scaling of technology. It has becom...
In this study, structural variations and overlay errors caused by multiple patterning lithography te...
the only solution for 32-nm lithography process, we need to investigate how DPT affects the performa...
Abstract — Double patterning lithography (DPL) is in current pro-duction for memory products, and is...
Abstract—1 We propose shift-trim double patterning lithogra-phy (ST-DPL), a cost-effective double pa...
[[abstract]]Overlay is one of the key designed rules for producing VLSI devices. In order to have a ...
Design Rules (DRs) are the biggest design-relevant quality metric for a technology. Even small chang...
In microelectronics, the increase of component density is the main solution to improve circuit perfo...
In microelectronics, the increase of component density is the main solution to improve circuit perfo...
textAs nanometer Very Large Scale Integration (VLSI) demands more transistor density to fabricate mu...
textAs nanometer Very Large Scale Integration (VLSI) demands more transistor density to fabricate mu...
Abstract—Double/Multiple-patterning (DP/MP) lithography in a multiple litho-etch steps process is a ...
En microélectronique, l'augmentation de la densité des composants est la solution principale pour am...
Overlay errors, cut/block and line/space critical-dimension (CD) variations are the major sources of...