Integrated Magnetic Memory for Embedded Computing Systems

Abstract This paper describes a new nonvolatile memory technology being developed for embedded computing. Based on a Magnetic Tunneling Junction (MTJ) cell, these devices will be integrated into a radiation-hard SOI CMOS process, to replace conventional ip ops and small on-chip memories. These nonvolatile memory cells will form an integral part of on-chip power management. Memory density is the primary driver for commercial MRAMs, which are designed using an X-Y addressing scheme. Current pulses on two orthogonal wires generate a magnetic eld, which is strong enough to reprogram a cell at the intersection between the two wires, and nowhere else. This requires that the cells be very uniform in their sensitiv-ity, and optimized for magnetic selectivity, so that only the desired cells are programmed