100 GHz integrated CMOS passive imager actual LNA noise factor can be formulated aswith>100 MV/W responsivity, 23fW/

Presented is a 100 GHz fully differential CMOS passive imager for system-on-chip integration, which features high gain, high sensitivity and high resilience to flicker noise and gain variation. It integrates a low-noise amplifier, a Dicke switch, a detector and a baseband pro-grammable gain amplifier in a single chip, and achieves the best noise equivalent power (NEP) (23fW / NameMeNameMeNameMeHz √ /26fW / NameMeNameMeNameMeHz √ for without/ with Dicke switch) in CMOS, the highest responsivity (.100 MV/ W) in silicon. It also demonstrates 1.96 K noise-equivalent temperature difference in 30 ms integration time. Introduction: Sub-millimetre-wave imaging is attracting increasing attention owing to its unique capability to penetrate through concealed obstacles such as fabric/fog/dust compared with that of infrared optics. Among them, passive imaging is of particular interest to con-struct pictures through detecting black body radiation without any emis