The noise power Tradeoff of Poly SiC Ka Band of IMPATT diodes

Abstract — The Noise properties and performance of SiC-based DDR IMPATT diode at Ka Band frequency has been investigated through modeling and simulation technique. SiC-based IMPATTs with its different poly types (3C, 4H, and 6H) are modeled, designed and a comparative study among three are presented in this paper. A noise analysis model was also developed to compare the noise characteristics of 3C, 4H and 6H SiC-based IM-PATTs. The results show that 3C-SiC based IMPATTs have better power delivery capability whereas 4H SiC-based IMPATTs are less noisy. An iterative method has been used to obtain the noise power tradeoff of these devices. It has been found that 4H SiC can generate 115.4 mW output power with 16.89 dB noisemeasure at 34 GHz. This device model has been designed in this work.This results also show the effect of negative conductance on the noise performance of the device. It is also found that 4H SiC based IMPATT has minimum shot noise ratio. Results of the analysis presented in this pa-per will be useful to find out a noise power tradeoff for different poly SiC based IMPATTs at Ka band frequencies