Add to ORKGAbstract — This paper we present the design and analysis of 1Kb Static Random Access Memory (SRAM) at 180nm technology and main focusing on optimizing power consumption and delay factors are improved by varying the size of transistor used in Sense Amplifier. The present 1kb SRAM can be divided into main three block sense amplifier, basic cell and precharged circuit. Present 1kb SRAM design input decoupled sense amplifier. Presented Sense amplifier CMOS schematic is design tanner EDA S-edit, Simulate T-spice and 0.18µm technology
A current mode sense amplifier which is proved to achieve low power and high speed is presented. Its...
The new trend of the DRAM design is to characterize by its reliability, delay, low power dissipatio...
With the development of CMOS technology, the performance including power dissipation and operation s...
Abstract — The sense amplifiers is a main peripheral of CMOS memory and play an important role to ov...
Static Random Access Memory (SRAM) have been used extensively in the market especially in product su...
The SRAM which functions as the cache for system-on-chip is vital in the electronic industry. The he...
Address decoder and sense amplifier is important component of SRAM memory. Selection of storage cell...
Abstract: SRAM is the most widely used embedded memory in modern digital systems, and their role is ...
A novel high-speed sense amplifier for ultra-low-voltage SRAM applications is presented. It introduc...
An extremely low energy per operation, single cycle 32 bit/word, 128 kb SRAM is fabricated in 90 nm ...
Low power static random access memory (SRAM) takes significant portion of area on chip in all modern...
A current mode sense amplifier which is proved to achieve low power and high speed is presented. Its...
[[abstract]]Transistor sizing of a latched sense amplifier is shown to be able to trade sensitivity ...
n the prominent era of the digital world and Very Large-Scale Integration (VLSI) circuits, Static ...
Abstract- This paper presents a fast and low-power Static Random Access Memory (SRAM) design. SRAM a...
A current mode sense amplifier which is proved to achieve low power and high speed is presented. Its...
The new trend of the DRAM design is to characterize by its reliability, delay, low power dissipatio...
With the development of CMOS technology, the performance including power dissipation and operation s...
Abstract — The sense amplifiers is a main peripheral of CMOS memory and play an important role to ov...
Static Random Access Memory (SRAM) have been used extensively in the market especially in product su...
The SRAM which functions as the cache for system-on-chip is vital in the electronic industry. The he...
Address decoder and sense amplifier is important component of SRAM memory. Selection of storage cell...
Abstract: SRAM is the most widely used embedded memory in modern digital systems, and their role is ...
A novel high-speed sense amplifier for ultra-low-voltage SRAM applications is presented. It introduc...
An extremely low energy per operation, single cycle 32 bit/word, 128 kb SRAM is fabricated in 90 nm ...
Low power static random access memory (SRAM) takes significant portion of area on chip in all modern...
A current mode sense amplifier which is proved to achieve low power and high speed is presented. Its...
[[abstract]]Transistor sizing of a latched sense amplifier is shown to be able to trade sensitivity ...
n the prominent era of the digital world and Very Large-Scale Integration (VLSI) circuits, Static ...
Abstract- This paper presents a fast and low-power Static Random Access Memory (SRAM) design. SRAM a...
A current mode sense amplifier which is proved to achieve low power and high speed is presented. Its...
The new trend of the DRAM design is to characterize by its reliability, delay, low power dissipatio...
With the development of CMOS technology, the performance including power dissipation and operation s...
