Abstract — In this study Aluminum Antimonide (AlSb) thin films were synthesized by electro-deposition technique using tri-sodium citrate as complexing agent. X-Ray studies were performed on both as-grown as well as on annealed films. The depositon potential was kept at-0.7 V and-0.8 V for a period of 15 minutes. The analysis of X-Ray diffraction spectra of the as-grown and annealed samples shows that the films are of AlSb material and are polycrystalline in the as-grown form. The hot probe analysis indicates that the grown film is of P-type in nature. In order to confirm the results we also used UV-VIS spectroscopy to determine the indirect and direct band gaps and the calculated values are in close agreement with the reported values in the...
Antimony is a promising material for the fabrication of photodetectors. This study deals with the gr...
Experimental results on MOCVD epitaxy of some antimonides on GaSb substrates are presented. Specific...
NbN thin films have been deposited by plasma-enhanced atomic layer deposition (PEALD) from the metal...
Aluminum antimony (AlSb) is a promising photovoltaic material with a band gap of about 1.62 eV. Howe...
AlSb and AlAs{sub x}Sb{sub 1{minus}x} epitaxial films grown by metal-organic chemical vapor depositi...
This project involves the growth and optimization of the III-V antimony based materials including In...
Aluminum antimony (AlSb) is an indirect band gap semiconductor with Eg of about 1.62 eV at 300 K and...
AlSb thin films, showing semiconducting properties similar to those of massive material, have been o...
We report on the characterization of GaSb layers grown on silicon substrates using an AlSb nucleatio...
Aluminum antimonide is a semiconductor of the Group III-V order. With a wide indirect band gap, AlSb...
A thin film semiconductor device was grown by MBE methods, characterized for material quality and ev...
It is impossible to deposit aluminum from aqueous solution because hydrogen generation occur before ...
Structural, optical, and electrical properties of AlSb, AlAs, AlP, AlN, and BN thin films deposited ...
The coating of complex three-dimensional structures with ultrathin metal films is of great interest ...
Aluminum thin films were deposited on amorphous substrates by getter sputtering. The effects of subs...
Antimony is a promising material for the fabrication of photodetectors. This study deals with the gr...
Experimental results on MOCVD epitaxy of some antimonides on GaSb substrates are presented. Specific...
NbN thin films have been deposited by plasma-enhanced atomic layer deposition (PEALD) from the metal...
Aluminum antimony (AlSb) is a promising photovoltaic material with a band gap of about 1.62 eV. Howe...
AlSb and AlAs{sub x}Sb{sub 1{minus}x} epitaxial films grown by metal-organic chemical vapor depositi...
This project involves the growth and optimization of the III-V antimony based materials including In...
Aluminum antimony (AlSb) is an indirect band gap semiconductor with Eg of about 1.62 eV at 300 K and...
AlSb thin films, showing semiconducting properties similar to those of massive material, have been o...
We report on the characterization of GaSb layers grown on silicon substrates using an AlSb nucleatio...
Aluminum antimonide is a semiconductor of the Group III-V order. With a wide indirect band gap, AlSb...
A thin film semiconductor device was grown by MBE methods, characterized for material quality and ev...
It is impossible to deposit aluminum from aqueous solution because hydrogen generation occur before ...
Structural, optical, and electrical properties of AlSb, AlAs, AlP, AlN, and BN thin films deposited ...
The coating of complex three-dimensional structures with ultrathin metal films is of great interest ...
Aluminum thin films were deposited on amorphous substrates by getter sputtering. The effects of subs...
Antimony is a promising material for the fabrication of photodetectors. This study deals with the gr...
Experimental results on MOCVD epitaxy of some antimonides on GaSb substrates are presented. Specific...
NbN thin films have been deposited by plasma-enhanced atomic layer deposition (PEALD) from the metal...