Abstract- In recent years the demand for low power devices has increased tremendously due to the migration of computer workstations to handheld devices that need real-time performance within the budget for physical size and energy dissipation. As a result of this there is a fast growth of battery operated portable applications such as PDAs, cell phones, laptops and other handheld devices. But also at the same time problems arising from continuous technology scaling have recently made power reduction an important design issue for the digital circuits and applications. Operating at low power causes SRAM read-stability and write- ability as major design constraints. The stability of read and write operations can be increased using Schmitt trig...
Static random access memories (SRAM) are useful building blocks in various applications, including c...
Low power SRAM cell is a critical component in modern VLSI systems. The major portion of the power d...
International audienceSRAM operation at subthreshold/weak inversion region provides a significant po...
Static Random Access Memory (SRAM) has become a key element in modern VLSI systems. In this paper, a...
Abstract-Low power design has become the major challenge of present chip designs as leakage power ha...
Aggressive scaling of transistor dimensions with each technology generation has resulted an increase...
As the development of complex metal oxide semiconductor (CMOS) technology, fast low-power static ran...
This paper presents 8T SRAM cell by using various techniques. The conflicting design requirement of ...
SRAMs are widely used in application based systems like medical instruments, portable electronic dev...
Low power design has become the major challenge of present chip designs as leakage power has been ri...
In this paper we are going to modify the Schmitt Trigger based SRAM for the purpose of more reduced ...
In Present scenario battery-powered hand-held multimedia systems become popular. The power consumpti...
Data in conventional six transistor (6T) static random access memory (SRAM) cells are vulnerable to ...
In this paper, a High Speed Low Power 10TSRAM (HS10T) with good read stability and write ability is ...
Four circuit techniques for high data stability and low power consumption in static CMOS memory circ...
Static random access memories (SRAM) are useful building blocks in various applications, including c...
Low power SRAM cell is a critical component in modern VLSI systems. The major portion of the power d...
International audienceSRAM operation at subthreshold/weak inversion region provides a significant po...
Static Random Access Memory (SRAM) has become a key element in modern VLSI systems. In this paper, a...
Abstract-Low power design has become the major challenge of present chip designs as leakage power ha...
Aggressive scaling of transistor dimensions with each technology generation has resulted an increase...
As the development of complex metal oxide semiconductor (CMOS) technology, fast low-power static ran...
This paper presents 8T SRAM cell by using various techniques. The conflicting design requirement of ...
SRAMs are widely used in application based systems like medical instruments, portable electronic dev...
Low power design has become the major challenge of present chip designs as leakage power has been ri...
In this paper we are going to modify the Schmitt Trigger based SRAM for the purpose of more reduced ...
In Present scenario battery-powered hand-held multimedia systems become popular. The power consumpti...
Data in conventional six transistor (6T) static random access memory (SRAM) cells are vulnerable to ...
In this paper, a High Speed Low Power 10TSRAM (HS10T) with good read stability and write ability is ...
Four circuit techniques for high data stability and low power consumption in static CMOS memory circ...
Static random access memories (SRAM) are useful building blocks in various applications, including c...
Low power SRAM cell is a critical component in modern VLSI systems. The major portion of the power d...
International audienceSRAM operation at subthreshold/weak inversion region provides a significant po...