The introduction of 157nm as the next optical lithography wavelength has created a need for new soft (polymeric) or hard (quartz) pellicle materials optimized for this wavelength. Materials design and development of ultra transparent fluoropolymers suitable for 157 nm soft pellicle applications has produced a number of promising candidate materials with absorbances below 0.03/µm as is necessary to achieve pellicle transmissions above 95%. We have developed 12 families of experimental TeflonAF ® (TAFx) materials which have sufficient transparency to produce transmissions above 95%. For the successful fabrication of 157nm pellicles from these materials, the fluoropolymers must have appropriate physical properties to permit the spin coating of...
Finding materials that offer the all of the characteristics required of photoresist matrix resin pol...
The Detector Development Group at the University of Florida has identified the only known optically ...
EUV pellicles are needed to support EUV lithography in high volume manufacturing. We demonstrate pro...
The advance of 157 nm as the next photolithographic wavelength has created a need to for transparent...
The advance of 157 nm as the next photolithographic wavelength has created a need to for transparent...
During the past year the probability that 157 nm lithography will precede next generation lithograph...
The development of high performance materials is of great interest due to the increasing demands of ...
We have developed a family of 157 nm resists that utilize fluorinated terpolymer resins composed of ...
Photolithography at 157 nm requires development of new photoresists that are highly transparent at t...
textThe advancement of the microelectronics industry is heavily dependent on the design, synthesis,...
textThe advancement of the microelectronics industry is heavily dependent on the design, synthesis,...
Technological advances in aerospace, automotive, electronics and other high-technology industries co...
textThe microelectronics industries’ ability to keep pace with Moore’s law (the doubling of the num...
textThe microelectronics industries’ ability to keep pace with Moore’s law (the doubling of the num...
As optical lithography goes deep into the ultraviolet (UV) range for higher resolution, high-energy ...
Finding materials that offer the all of the characteristics required of photoresist matrix resin pol...
The Detector Development Group at the University of Florida has identified the only known optically ...
EUV pellicles are needed to support EUV lithography in high volume manufacturing. We demonstrate pro...
The advance of 157 nm as the next photolithographic wavelength has created a need to for transparent...
The advance of 157 nm as the next photolithographic wavelength has created a need to for transparent...
During the past year the probability that 157 nm lithography will precede next generation lithograph...
The development of high performance materials is of great interest due to the increasing demands of ...
We have developed a family of 157 nm resists that utilize fluorinated terpolymer resins composed of ...
Photolithography at 157 nm requires development of new photoresists that are highly transparent at t...
textThe advancement of the microelectronics industry is heavily dependent on the design, synthesis,...
textThe advancement of the microelectronics industry is heavily dependent on the design, synthesis,...
Technological advances in aerospace, automotive, electronics and other high-technology industries co...
textThe microelectronics industries’ ability to keep pace with Moore’s law (the doubling of the num...
textThe microelectronics industries’ ability to keep pace with Moore’s law (the doubling of the num...
As optical lithography goes deep into the ultraviolet (UV) range for higher resolution, high-energy ...
Finding materials that offer the all of the characteristics required of photoresist matrix resin pol...
The Detector Development Group at the University of Florida has identified the only known optically ...
EUV pellicles are needed to support EUV lithography in high volume manufacturing. We demonstrate pro...