Abstract-Low power design has become the major challenge of present chip designs as leakage power has been rising with scaling of technologies. As modern technology is spreading fast, it is very important to design low power, high performance, and fast responding SRAM (Static Random Access Memory) since they are critical component in high performance processors. The Conventional 6T SRAM cell is very much prone to noise during read operation. To overcome the problems in 6T SRAM cell, researchers have proposed different SRAM topologies such as 8T, 9T, 10T etc. bitcell design. These designs can improve the cell stability but suffer from bitline leakage noise. In this paper, an SRAM memory has been designed to overcome power consumption problem...
An ultra-low leakage static random-access memory (SRAM) cell structure with 8 transistors is propose...
Data in conventional six transistor (6T) static random access memory (SRAM) cells are vulnerable to ...
The reduction of the channel length due to scaling increases the leakage current resulting in a majo...
Low power design has become the major challenge of present chip designs as leakage power has been ri...
Static Random Access Memory (SRAM) has become a key element in modern VLSI systems. In this paper, a...
As the development of complex metal oxide semiconductor (CMOS) technology, fast low-power static ran...
SRAM cell is the basic memory devices which is made from the combination of Flip Flop and registers ...
Stability of a Static Random Access Memory (SRAM) cell is an important factor when considering an SR...
International audienceSRAM operation at subthreshold/weak inversion region provides a significant po...
This paper is based on the observation of 8T single ended static random access memory (SRAM) and two...
As the technology is advancing into deep submicron and as the size of the devices is scaled down, a ...
Abstract- Data in conventional six transistor (6T) static random access memory (SRAM) cells are vuln...
This article clarifies about the variables that influence the static noise margin (SNM) of a static ...
Data in conventional six transistor (6T) static random access memory (SRAM) cells are vulnerable to ...
High speed and low power consumption have been the primary issue to design Static Random Access Memo...
An ultra-low leakage static random-access memory (SRAM) cell structure with 8 transistors is propose...
Data in conventional six transistor (6T) static random access memory (SRAM) cells are vulnerable to ...
The reduction of the channel length due to scaling increases the leakage current resulting in a majo...
Low power design has become the major challenge of present chip designs as leakage power has been ri...
Static Random Access Memory (SRAM) has become a key element in modern VLSI systems. In this paper, a...
As the development of complex metal oxide semiconductor (CMOS) technology, fast low-power static ran...
SRAM cell is the basic memory devices which is made from the combination of Flip Flop and registers ...
Stability of a Static Random Access Memory (SRAM) cell is an important factor when considering an SR...
International audienceSRAM operation at subthreshold/weak inversion region provides a significant po...
This paper is based on the observation of 8T single ended static random access memory (SRAM) and two...
As the technology is advancing into deep submicron and as the size of the devices is scaled down, a ...
Abstract- Data in conventional six transistor (6T) static random access memory (SRAM) cells are vuln...
This article clarifies about the variables that influence the static noise margin (SNM) of a static ...
Data in conventional six transistor (6T) static random access memory (SRAM) cells are vulnerable to ...
High speed and low power consumption have been the primary issue to design Static Random Access Memo...
An ultra-low leakage static random-access memory (SRAM) cell structure with 8 transistors is propose...
Data in conventional six transistor (6T) static random access memory (SRAM) cells are vulnerable to ...
The reduction of the channel length due to scaling increases the leakage current resulting in a majo...