Robustness Study of SiC MOSFET Under Harsh Electrical and Thermal Constraints To an in-depth physical failure analysis

Abstract — The improvement of power conversion systems makes SiC devices very attractive for efficiency, compacity and robustness. However, their behavior in response to short circuit mode must be carefully studied to ensure the reliability of systems. This study deals with a SiC MOSFET. After the description of the component structure and its electrical performances, the paper presents some preliminary results for robustness evaluation in harsh electrical and thermal conditions. Extensive studies are underway to try to correlate the electrical measurements with an in-depth structural analysis