A NOVEL MODEL OF RF MEMS SHUNT SWITCH

The advancement in the Radio Frequency Micro- Electro Mechanical Systems (RF MEMS) switch has enabled new technologies for microwave switching applications. It is the method used for reduction of material used which in turn decreases the cost and the power dissipation. The RF MEMS shunt switch is constructed for high frequency microwave switching. The switch is driven by electrostatic actuation. The contact line and the RF signal line behaves as the parallel plate capacitor. The Switch provides a good isolation in the off state and less insertion loss. The geometry parameters of the switch is chosen such that the switch can be easily integrated. The Switch Niobium metal is used for the contact lines as it has good superconducting characteristics in cryogenic temperature. The performance of the switch is analyzed and the result shows the deformation of the switch with low actuation voltage