Abstract — This paper presents the technique used to reduce the power dissipation in 6T SRAM. Normally there is a power loss in charging and discharging the bit line during reading and writing. This power loss is drastically reduced with the use of additional adiabatic circuit. Simulation of the circuit is done using HSPICE in 65nm technology. This circuit also preserve power during writing phase also
Minimum-energy-driven circuit design is highly required in numerous emerging applications such as mo...
Low power design has become the major challenge of present chip designs as leakage power has been ri...
As CMOS process technology advances into deep sub-micron era, static leakage power becomes an import...
<div>Power consumption has become a critical concern in both high performance and portable applicati...
As the development of complex metal oxide semiconductor (CMOS) technology, fast low-power static ran...
This paper presents our attempt to recover back energy that is stored in the bit lines and in the ce...
This paper describes a low power write scheme which reduces SRAM power by 90 % by using seven-transi...
This paper proposes an energy-recovering (a.k.a. adiabatic) static RAM with a novel driver that redu...
ABSTRACT: This paper proposes CMOS 5T SRAM cell intended for the power reduction in it for advanced ...
The requirements of low power integrated circuits are very important in all electronic portable equi...
This paper proposes an energy-recovering (a.k.a. adiabatic) static RAM with a novel driver that redu...
This paper focuses on reducing the Write Power consumption and delay of a SRAM cell in 32 nm technol...
ABSTRACT: Memory is the basic need of most of the electronic devices. These memories are mainly desi...
Technology advancement has brought about the continuous scaling of transistors sizes.The decreasing ...
Power leakage in a RAM cell is a major concern in today’s development of shrinking size and high sta...
Minimum-energy-driven circuit design is highly required in numerous emerging applications such as mo...
Low power design has become the major challenge of present chip designs as leakage power has been ri...
As CMOS process technology advances into deep sub-micron era, static leakage power becomes an import...
<div>Power consumption has become a critical concern in both high performance and portable applicati...
As the development of complex metal oxide semiconductor (CMOS) technology, fast low-power static ran...
This paper presents our attempt to recover back energy that is stored in the bit lines and in the ce...
This paper describes a low power write scheme which reduces SRAM power by 90 % by using seven-transi...
This paper proposes an energy-recovering (a.k.a. adiabatic) static RAM with a novel driver that redu...
ABSTRACT: This paper proposes CMOS 5T SRAM cell intended for the power reduction in it for advanced ...
The requirements of low power integrated circuits are very important in all electronic portable equi...
This paper proposes an energy-recovering (a.k.a. adiabatic) static RAM with a novel driver that redu...
This paper focuses on reducing the Write Power consumption and delay of a SRAM cell in 32 nm technol...
ABSTRACT: Memory is the basic need of most of the electronic devices. These memories are mainly desi...
Technology advancement has brought about the continuous scaling of transistors sizes.The decreasing ...
Power leakage in a RAM cell is a major concern in today’s development of shrinking size and high sta...
Minimum-energy-driven circuit design is highly required in numerous emerging applications such as mo...
Low power design has become the major challenge of present chip designs as leakage power has been ri...
As CMOS process technology advances into deep sub-micron era, static leakage power becomes an import...