Add to ORKGThis is a review paper on the topic of multiple gate field effect transistors: MuGFETs, or FinFETs, as they are called. First, the motivation behind multiple gate FETs is presented. This is followed by looking at the evolution of FinFET technologies; the main flavors (variants) of Multigate FETs; and their advantages/disadvantages. The physics and technology of these devices is briefly discussed. Results are then presented which show the performance figures of merit of FinFETs, and their strengths and weaknesses. Finally, a perspective on the future of the FinFET technology is presented
The focus of this chapter is a novel class of devices such as Multiple-Independent-Gate Field-Effect...
Planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) have been leading the semiconduc...
A Tn Gated Fin Field Effect Transistor is on of the many novel devices that may be replacing planar ...
This study illustrates a type of novel device. Integrating fin field-effect transistors (FinFETs) wi...
Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS at the nano scal...
Abstract—FinFET technology has been proposed as a promising alternative for deep sub-micron CMOS tec...
Scaling of the standard single-gate bulk MOSFETs faces great challenges in the nanometer regime due ...
Since Moore’s law driven scaling of planar MOSFETs faces formidable challenges in the nanometer regi...
In this paper, the impact of important geometrical parameters such as source and drain thickness, fi...
During analysis of complexities of the Metal Oxide Semiconductor Field Effect Transistors (MOSFET) t...
An insight into the benefits and challenges of FinFET based multi-gate devices is presented. The rol...
This last decade silicon MOSFETs have demonstrated their potentialities for very high frequency appl...
Semiconductor industry greatly depends on CMOS technology and now needs competent technology with ha...
The Semiconductor industry has excelled the electronics market in providing high speed, power effici...
Abstract—Scaling of the standard single-gate bulk MOSFETs faces great challenges in the nanometer re...
The focus of this chapter is a novel class of devices such as Multiple-Independent-Gate Field-Effect...
Planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) have been leading the semiconduc...
A Tn Gated Fin Field Effect Transistor is on of the many novel devices that may be replacing planar ...
This study illustrates a type of novel device. Integrating fin field-effect transistors (FinFETs) wi...
Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS at the nano scal...
Abstract—FinFET technology has been proposed as a promising alternative for deep sub-micron CMOS tec...
Scaling of the standard single-gate bulk MOSFETs faces great challenges in the nanometer regime due ...
Since Moore’s law driven scaling of planar MOSFETs faces formidable challenges in the nanometer regi...
In this paper, the impact of important geometrical parameters such as source and drain thickness, fi...
During analysis of complexities of the Metal Oxide Semiconductor Field Effect Transistors (MOSFET) t...
An insight into the benefits and challenges of FinFET based multi-gate devices is presented. The rol...
This last decade silicon MOSFETs have demonstrated their potentialities for very high frequency appl...
Semiconductor industry greatly depends on CMOS technology and now needs competent technology with ha...
The Semiconductor industry has excelled the electronics market in providing high speed, power effici...
Abstract—Scaling of the standard single-gate bulk MOSFETs faces great challenges in the nanometer re...
The focus of this chapter is a novel class of devices such as Multiple-Independent-Gate Field-Effect...
Planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) have been leading the semiconduc...
A Tn Gated Fin Field Effect Transistor is on of the many novel devices that may be replacing planar ...