0-150 W GaN-on-Si RF Power Transistor

Abstract – A large periphery high power AlGaN/GaN HFET grown on a silicon substrate has demonstrated over 150 W of CW RF output power along with excellent drain efficiency of 65%. When operated under WCDMA modulation and 28 Vdc drain supply voltage, these devices produced 20 W of RF output power with a corresponding drain efficiency of 27 % while achieving an adjacent channel power ratio (ACPR) of-39 dBc. A 36 mm device was tested in a DPD linearizer under multi-carrier WCDMA modulation and achieved 20 dB of linearity improvement with 35 % drain efficiency. Lastly, device reliability data is presented and shows extrapolated 20 year drift estimates of less than 1 dB for Psat. Index Terms – AlGaN/GaN HFETs, GaN high electron mobility transistor (HEMTs), linearity, reliability, RF power transistors. I