Abstract. Zinc oxide (ZnO) thin films were deposited on glass substrates from ammonium zincate complex as cationic precursor following SILAR (Successive ion layer adsorption and reaction) technique. Characterization techniques of XRD, HRSEM, TEM, EDX and FTIR were utilized for detailed microstructural studies of the coated films. A comparison of physical properties of the films was made from those deposited from other zinc complexes as cationic precursor. Particle size analysis using x-ray line broadening analysis shows an average particle of 22.75 nm for ZnO film. Both instrumental and strain broadening was taken into account while estimating the particle size. The value agrees well with 25.8 nm obtained from TEM measurement. Films are hig...
Zinc Oxide (ZnO) thin films were deposited for five different molarity (M) of Zinc acetate hydrated ...
[[abstract]]Zinc oxide (ZnO) thin films are grown using an acidic sol by dip coating. The acidic sol...
Zinc oxide (ZnO) is one of the most promising metal oxide semiconductor materials, particularly for ...
ZnO films were obtained by successive ionic layer adsorption and reaction (SILAR) method from four d...
ZnO thin films have been deposited on the glass substrates by spray pyrolysis method. In this work ...
The ZnO thin film is prepared on Fluorine Tin Oxide (FTO) coated glass substrate by using SILAR depo...
ZnO is a strategic material for various photonic applications. We present our results on characteriz...
Zinc oxide thin films were prepared by spray pyrolytic decomposition of zinc acetate onto a glass su...
Ozcelik, Adem/0000-0002-3124-795XWOS: 000260483400079ZnO thin films were prepared using zinc chlorid...
International audienceZnO thin films were deposited on either indium tin oxide-coated glass by the e...
International audienceZnO thin films were deposited on either indium tin oxide-coated glass by the e...
International audienceZnO thin films were deposited on either indium tin oxide-coated glass by the e...
International audienceZnO thin films were deposited on either indium tin oxide-coated glass by the e...
ZnO thin films were prepared using zinc chloride, zinc acetate and zinc nitrate precursors by spray ...
This paper presents the characterization of ZnO thin films with the thickness of 8nm, 30nm, and 200n...
Zinc Oxide (ZnO) thin films were deposited for five different molarity (M) of Zinc acetate hydrated ...
[[abstract]]Zinc oxide (ZnO) thin films are grown using an acidic sol by dip coating. The acidic sol...
Zinc oxide (ZnO) is one of the most promising metal oxide semiconductor materials, particularly for ...
ZnO films were obtained by successive ionic layer adsorption and reaction (SILAR) method from four d...
ZnO thin films have been deposited on the glass substrates by spray pyrolysis method. In this work ...
The ZnO thin film is prepared on Fluorine Tin Oxide (FTO) coated glass substrate by using SILAR depo...
ZnO is a strategic material for various photonic applications. We present our results on characteriz...
Zinc oxide thin films were prepared by spray pyrolytic decomposition of zinc acetate onto a glass su...
Ozcelik, Adem/0000-0002-3124-795XWOS: 000260483400079ZnO thin films were prepared using zinc chlorid...
International audienceZnO thin films were deposited on either indium tin oxide-coated glass by the e...
International audienceZnO thin films were deposited on either indium tin oxide-coated glass by the e...
International audienceZnO thin films were deposited on either indium tin oxide-coated glass by the e...
International audienceZnO thin films were deposited on either indium tin oxide-coated glass by the e...
ZnO thin films were prepared using zinc chloride, zinc acetate and zinc nitrate precursors by spray ...
This paper presents the characterization of ZnO thin films with the thickness of 8nm, 30nm, and 200n...
Zinc Oxide (ZnO) thin films were deposited for five different molarity (M) of Zinc acetate hydrated ...
[[abstract]]Zinc oxide (ZnO) thin films are grown using an acidic sol by dip coating. The acidic sol...
Zinc oxide (ZnO) is one of the most promising metal oxide semiconductor materials, particularly for ...