Add to ORKGAbstract — First the surface-potential-based compact MOS model, PSP, is introduced. After a discussion of the general ad-vantages of this model, it is benchmarked against measurements from the 45 nm technology node. Finally, we zoom in on the modeling in PSP of two effects that are of special importance for RF applications: distortion and noise. I
[[abstract]]In this paper, we demonstrate an analysis of the effects of transconductance g(m) on the...
The design of radio-frequency (RF) integrated circuits (ICs) in deep-submicron CMOS processes requir...
Compact modeling of P+ contact resistances is important for characterization of substrate noise coup...
Modem CMOS technologies are becoming increasingly attractive for RF ap-plications. This imposes stri...
International audienceWith the maturity of CMOS technologies and their use for low voltage analog ap...
PSP is a well-known surface potential based model for deep-submicron bulk MOSFET. Initially, PSP mod...
In this paper the capacitance components of the PSP compact model which is selected as successor of ...
Abstract — This paper reports recent progress on partially depleted (PD) SOI modeling using a surfac...
A comparative benchmark of the linearity properties of two of the most popular compact transistor mo...
Abstract. This paper addresses current issues in compact MOSFET modeling, provides an overview and s...
integrated circuits Abstract: A new compact model for MOS transistors has been developed, MOS Model ...
In this paper, a small-signal MOSFET model is described, which takes the local effects of both veloc...
\u3cp\u3eThe distortion behaviour of MOSFETs is important for RF-applications. In this paper the inf...
We present a new, PSP-based compact model for symmetric 3-terminal FinFETs with thin undoped or ligh...
Abstract—This work describes an advanced physics-based com-pact MOSFET model (SP). Both the quasista...
[[abstract]]In this paper, we demonstrate an analysis of the effects of transconductance g(m) on the...
The design of radio-frequency (RF) integrated circuits (ICs) in deep-submicron CMOS processes requir...
Compact modeling of P+ contact resistances is important for characterization of substrate noise coup...
Modem CMOS technologies are becoming increasingly attractive for RF ap-plications. This imposes stri...
International audienceWith the maturity of CMOS technologies and their use for low voltage analog ap...
PSP is a well-known surface potential based model for deep-submicron bulk MOSFET. Initially, PSP mod...
In this paper the capacitance components of the PSP compact model which is selected as successor of ...
Abstract — This paper reports recent progress on partially depleted (PD) SOI modeling using a surfac...
A comparative benchmark of the linearity properties of two of the most popular compact transistor mo...
Abstract. This paper addresses current issues in compact MOSFET modeling, provides an overview and s...
integrated circuits Abstract: A new compact model for MOS transistors has been developed, MOS Model ...
In this paper, a small-signal MOSFET model is described, which takes the local effects of both veloc...
\u3cp\u3eThe distortion behaviour of MOSFETs is important for RF-applications. In this paper the inf...
We present a new, PSP-based compact model for symmetric 3-terminal FinFETs with thin undoped or ligh...
Abstract—This work describes an advanced physics-based com-pact MOSFET model (SP). Both the quasista...
[[abstract]]In this paper, we demonstrate an analysis of the effects of transconductance g(m) on the...
The design of radio-frequency (RF) integrated circuits (ICs) in deep-submicron CMOS processes requir...
Compact modeling of P+ contact resistances is important for characterization of substrate noise coup...