High-speed resonant-cavity-enhanced silicon photodetectors on reflecting silicon-on-insulator substrates

Abstract—In this letter, we report a resonant-cavity-enhanced Si photodetector fabricated on a reflecting silicon-on-insulator (SOI) substrate. The substrate incorporates a two period distributed Bragg reflector (DBR) fabricated using a commercially available double-SOI process. The buried DBR provides a 90 % reflecting surface. The resonant-cavity-enhanced Si photodetectors have 40 % quantum efficiency at 860 nm and response time of 29 ps. These devices are suitable for 10-Gb/s data communications. Index Terms—Photodetector, resonant cavity enhanced, silicon, silicon on insulator. I