An overview of non-volatile memory technology and the implication for tools and architectures

Abstract — Novel nonvolatile memory technologies are gaining significant attentions from semiconductor industry in the competition of universal memory development. We used Spin-Transfer Torque Random Access Memory (STT-RAM) and Resistive Random Access Memory (R-RAM) as examples to discuss the implication of emerging nonvolatile memory for tools and architectures. Three aspects, including device and memory cell modeling, device/circuit co-design consideration and novel memory architecture, are discussed in details. The goal of these discussions is to design a high-density, low-power, high-performance nonvolatile memory with simple architecture and minimized circuit design complexity