Zinc selenide has been investigated for a candidate to a blue light emitting diode and a blue laser for a long time. There are two problems for a practical use which are to obtain a low resistive p−type ZnSe and to get a good ohmic contact to p−type ZnSe by a simple method. In metalorganic vapor phase epitaxy (MOVPE) a nitrogen doping for an acceptor impurity was done by using NH3. However, a nitrogen atom is partially inactive by a hydroge
Both compensation and hydrogen-related phenomenon in ZnSe grown by MBE have been systematically inve...
We report on the growth by metalorganic vapour phase epitaxy of high structural and optical quality ...
We report on the growth by metalorganic vapour phase epitaxy of high structural and optical quality ...
Zinc Selenide (ZnSe) is a II-VI semiconductor with a band gap of 2.67 eV. The large bandgap makes it...
This work briefly reviews the state of the art of p-type doping metalorganic vapor phase epitaxy (MO...
Blue-green light emitting diodes and lasers have been the driving force behind the dramatic improvem...
Blue-green light emitting diodes and lasers have been the driving force behind the dramatic improvem...
Blue-green light emitting diodes and lasers have been the driving force behind the dramatic improvem...
Zinc selenide is a wide band-gap (2.67 eV) II-VI compound semiconductor with potential use as a blue...
AbstractWhile much attention has been focussed on the III-nitride compound semiconductors for the fa...
Sb-doped ZnSe epitaxial layers were grown on (100) GaAs substrates by MOVPE using DMZn, DMSe, and TE...
AbstractWhile much attention has been focussed on the III-nitride compound semiconductors for the fa...
This thesis describes the growth of high quality ZnSe, ZnSSe, and ZnMgSSe epitaxial films on GaAs su...
Despite the success of III-nitride materials in the fabrication of short-wavelength emitters, wide-b...
AbstractDespite the success of III-nitride materials in the fabrication of short-wavelength emitters...
Both compensation and hydrogen-related phenomenon in ZnSe grown by MBE have been systematically inve...
We report on the growth by metalorganic vapour phase epitaxy of high structural and optical quality ...
We report on the growth by metalorganic vapour phase epitaxy of high structural and optical quality ...
Zinc Selenide (ZnSe) is a II-VI semiconductor with a band gap of 2.67 eV. The large bandgap makes it...
This work briefly reviews the state of the art of p-type doping metalorganic vapor phase epitaxy (MO...
Blue-green light emitting diodes and lasers have been the driving force behind the dramatic improvem...
Blue-green light emitting diodes and lasers have been the driving force behind the dramatic improvem...
Blue-green light emitting diodes and lasers have been the driving force behind the dramatic improvem...
Zinc selenide is a wide band-gap (2.67 eV) II-VI compound semiconductor with potential use as a blue...
AbstractWhile much attention has been focussed on the III-nitride compound semiconductors for the fa...
Sb-doped ZnSe epitaxial layers were grown on (100) GaAs substrates by MOVPE using DMZn, DMSe, and TE...
AbstractWhile much attention has been focussed on the III-nitride compound semiconductors for the fa...
This thesis describes the growth of high quality ZnSe, ZnSSe, and ZnMgSSe epitaxial films on GaAs su...
Despite the success of III-nitride materials in the fabrication of short-wavelength emitters, wide-b...
AbstractDespite the success of III-nitride materials in the fabrication of short-wavelength emitters...
Both compensation and hydrogen-related phenomenon in ZnSe grown by MBE have been systematically inve...
We report on the growth by metalorganic vapour phase epitaxy of high structural and optical quality ...
We report on the growth by metalorganic vapour phase epitaxy of high structural and optical quality ...