Elevated temperatures typically used to grow III−nitrides result in “switching on ” some physical−chemical mechanisms that are not so important for conventional III−V compounds. Such phenomena as the production of adducts via reactions between metalorganic precursors (TMGa, TMAl and the products of their decomposition) and ammonia, gas−phase clustering, and formation of particles in the reactor hot zones are generally recognized t
The role of tin in the mechanism by which aluminium nitride grows on aluminium powder is explored. I...
A systematic study is performed on the dependence of the Al-mole fraction in AlxGa1-xN on the organo...
In this perspective we present recent experimental and computational progress in catalytic ammonia s...
The Al composition of metalorganic chemical vapor deposition (MOCVD)-grown AlGaN alloy layers is fou...
The effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition is inve...
We report the growth and characterization of the AlGaN on low temperature (LT) AlN interlayer (IL) a...
The numerical simulation study on the chemistry-transport process for the growth of AlN in a rotatin...
The subject of the presented work is a combination of reactor modelling and growth experiments of Al...
Aluminum powder entrained by ammonia-containing nitrogen gas was reacted at various temperatures and...
For the purpose of applications in mechanics, nitriding of aluminium has been performed in a high-cu...
The outstanding properties of group III- nitrides such as their high temperature and chemical stabil...
AlGaN-based deep ultraviolet light-emitting diodes (LEDs) have a wide range of applications such as ...
The nitriding reaction of floating Al particles in N_2 gas was studied at 1350°-1550℃. The hollow sp...
Reactivity of aluminum cluster anions toward ammonia was studied via mass spectrometry. Highly selec...
Aluminum nitride (AlN) is used extensively in the semiconductor industry as a high-thermal-conductiv...
The role of tin in the mechanism by which aluminium nitride grows on aluminium powder is explored. I...
A systematic study is performed on the dependence of the Al-mole fraction in AlxGa1-xN on the organo...
In this perspective we present recent experimental and computational progress in catalytic ammonia s...
The Al composition of metalorganic chemical vapor deposition (MOCVD)-grown AlGaN alloy layers is fou...
The effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition is inve...
We report the growth and characterization of the AlGaN on low temperature (LT) AlN interlayer (IL) a...
The numerical simulation study on the chemistry-transport process for the growth of AlN in a rotatin...
The subject of the presented work is a combination of reactor modelling and growth experiments of Al...
Aluminum powder entrained by ammonia-containing nitrogen gas was reacted at various temperatures and...
For the purpose of applications in mechanics, nitriding of aluminium has been performed in a high-cu...
The outstanding properties of group III- nitrides such as their high temperature and chemical stabil...
AlGaN-based deep ultraviolet light-emitting diodes (LEDs) have a wide range of applications such as ...
The nitriding reaction of floating Al particles in N_2 gas was studied at 1350°-1550℃. The hollow sp...
Reactivity of aluminum cluster anions toward ammonia was studied via mass spectrometry. Highly selec...
Aluminum nitride (AlN) is used extensively in the semiconductor industry as a high-thermal-conductiv...
The role of tin in the mechanism by which aluminium nitride grows on aluminium powder is explored. I...
A systematic study is performed on the dependence of the Al-mole fraction in AlxGa1-xN on the organo...
In this perspective we present recent experimental and computational progress in catalytic ammonia s...