Add to ORKGNovel three dimensional (3D) gallium structures are presented by using commercial organometallics and conventional metal−organic vapour phase epitaxy system (MOVPE). These 3D structures grow up naturally on GaAs substrates and their shapes depend on the growth conditions and principally on the growth temperature
Rode pointed out that periodically-disturbed surface morphology can occur on epilayers grown on slig...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineeri...
The vapor phase structures of Al(tBU)3 and Ga(tBU)3 have been investigated by gas phase electron dif...
Abstract Superlattices of cubic gallium nitride (GaN) and gallium arsenide (GaAs) were grown on GaAs...
International audienceThis paper presents the growth and characterization of three-dimensional struc...
The epitaxial growth mechanism of truncated triangular III-V GaAs nanowires by metal-organic chemica...
Epitaxial layers of GaAs have been grown in an atmospheric organometallic CVD system, for a wide var...
The heterogeneous integration of III-V materials on a Si CMOS platform offers tremendous prospects f...
The epitaxial growth mechanism of truncated triangular III-V GaAs nanowires by metal-organic chemica...
The epitaxial growth mechanism of truncated triangular III-V GaAs nanowires by metal-organic chemica...
We have investigated the structural and optical properties of III-V nanowires, and axial and radial ...
Two different fabrication approaches were compared to obtain conductive GaAs nanowires: on one hand ...
We have investigated the structural and optical properties of III-V nanowires grown by metalorganic ...
The structure of gallium arsenide and indium phosphide (0 0 1) surfaces in the metalorganic vapor-ph...
Results of atmospheric and low pressure MOVPE growth of AIAs, GaAs, InAs, GaP, InP, (AIGa)As and (AI...
Rode pointed out that periodically-disturbed surface morphology can occur on epilayers grown on slig...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineeri...
The vapor phase structures of Al(tBU)3 and Ga(tBU)3 have been investigated by gas phase electron dif...
Abstract Superlattices of cubic gallium nitride (GaN) and gallium arsenide (GaAs) were grown on GaAs...
International audienceThis paper presents the growth and characterization of three-dimensional struc...
The epitaxial growth mechanism of truncated triangular III-V GaAs nanowires by metal-organic chemica...
Epitaxial layers of GaAs have been grown in an atmospheric organometallic CVD system, for a wide var...
The heterogeneous integration of III-V materials on a Si CMOS platform offers tremendous prospects f...
The epitaxial growth mechanism of truncated triangular III-V GaAs nanowires by metal-organic chemica...
The epitaxial growth mechanism of truncated triangular III-V GaAs nanowires by metal-organic chemica...
We have investigated the structural and optical properties of III-V nanowires, and axial and radial ...
Two different fabrication approaches were compared to obtain conductive GaAs nanowires: on one hand ...
We have investigated the structural and optical properties of III-V nanowires grown by metalorganic ...
The structure of gallium arsenide and indium phosphide (0 0 1) surfaces in the metalorganic vapor-ph...
Results of atmospheric and low pressure MOVPE growth of AIAs, GaAs, InAs, GaP, InP, (AIGa)As and (AI...
Rode pointed out that periodically-disturbed surface morphology can occur on epilayers grown on slig...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineeri...
The vapor phase structures of Al(tBU)3 and Ga(tBU)3 have been investigated by gas phase electron dif...