MATHEMATICAL MODELING OF BANDWIDTH AND POWER IN HIGH SPEED VLSI RLC INTERCONNECT WITH SKIN EFFECT

Received 22-02-2012, online 01-03-2012 ABSTRACT As the interconnect technology is shrinking into nanometres regime the bandwidth of long interconnects reduces. Hence an accurate modelling of bandwidth is essential for the estimation of performance of VLSI interconnects. With the increase in frequency towards the giga hertz range, the analysis of high frequency effects like skin effect etc. are becoming extensively predominant and important for high speed VLSI design. Skin effect attenuates the high frequency components of a signal more than that of the low frequency components. This paper strives to reflect the need for considering skin effect while modelling bandwidth for any interconnect segment. This paper presents a mathematical modelling of the bandwidth and power in an RLC interconnects with and without skin effect. In this paper noise dependence on the temperature is also discussed in VLSI on-chip RLC interconnect under the influence of ramp input